Effect of Oxygen Mixing Percentage on Mechanical and Microwave Dielectric Properties of SrBi4Ti4O15 Thin Films

Aurivillus oxide thin films with nanostructures attained much interest due to their structural stability, outstanding ferroelectric, and dielectric properties. This manuscript reports the influence of oxygen mixing percentage (OMP) on structural, nanomechanical, and microwave dielectric properties o...

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Main Authors: A. Rambabu, K. C. James Raju, Polamarasetty P. Kumar, Ramakrishna S. S. Nuvvula, Baseem Khan
Format: Article
Language:English
Published: Hindawi Limited 2023-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2023/8230336
_version_ 1827008652498698240
author A. Rambabu
K. C. James Raju
Polamarasetty P. Kumar
Ramakrishna S. S. Nuvvula
Baseem Khan
author_facet A. Rambabu
K. C. James Raju
Polamarasetty P. Kumar
Ramakrishna S. S. Nuvvula
Baseem Khan
author_sort A. Rambabu
collection DOAJ
description Aurivillus oxide thin films with nanostructures attained much interest due to their structural stability, outstanding ferroelectric, and dielectric properties. This manuscript reports the influence of oxygen mixing percentage (OMP) on structural, nanomechanical, and microwave dielectric properties of strontium bismuth titanate (SrBi4Ti4O15) thin films. SrBi4Ti4O15 films were successfully fabricated on fused silica substrates at room temperature, followed by annealed in a microwave furnace. The crystalline nature and purity of the phase was identified by X-ray diffraction. Nanomechanical properties of the SrBi4Ti4O15 films were studied using nanoindentation and nanoscratch tests. The best nanomechanical (hardness ∼6.9 GPa, Young’s modulus ∼120 GPa) properties were shown for films deposited around 50% of OMP. Microwave dielectric properties (dielectric constant and loss tangent at microwave frequencies 10 and 20 GHz) were extracted from the split postdielectric resonator technique.
first_indexed 2024-03-08T21:54:54Z
format Article
id doaj.art-46b330e43aeb4dd4a56d0d51d8980caa
institution Directory Open Access Journal
issn 1687-8124
language English
last_indexed 2025-02-18T12:37:10Z
publishDate 2023-01-01
publisher Hindawi Limited
record_format Article
series Advances in Condensed Matter Physics
spelling doaj.art-46b330e43aeb4dd4a56d0d51d8980caa2024-11-02T04:13:37ZengHindawi LimitedAdvances in Condensed Matter Physics1687-81242023-01-01202310.1155/2023/8230336Effect of Oxygen Mixing Percentage on Mechanical and Microwave Dielectric Properties of SrBi4Ti4O15 Thin FilmsA. Rambabu0K. C. James Raju1Polamarasetty P. Kumar2Ramakrishna S. S. Nuvvula3Baseem Khan4GMR Institute of TechnologySchool of PhysicsDepartment of Electrical and Electronics EngineeringDeparmtent of Electrical and Electronics EngineeringDepartment of Electrical and Computer EngineeringAurivillus oxide thin films with nanostructures attained much interest due to their structural stability, outstanding ferroelectric, and dielectric properties. This manuscript reports the influence of oxygen mixing percentage (OMP) on structural, nanomechanical, and microwave dielectric properties of strontium bismuth titanate (SrBi4Ti4O15) thin films. SrBi4Ti4O15 films were successfully fabricated on fused silica substrates at room temperature, followed by annealed in a microwave furnace. The crystalline nature and purity of the phase was identified by X-ray diffraction. Nanomechanical properties of the SrBi4Ti4O15 films were studied using nanoindentation and nanoscratch tests. The best nanomechanical (hardness ∼6.9 GPa, Young’s modulus ∼120 GPa) properties were shown for films deposited around 50% of OMP. Microwave dielectric properties (dielectric constant and loss tangent at microwave frequencies 10 and 20 GHz) were extracted from the split postdielectric resonator technique.http://dx.doi.org/10.1155/2023/8230336
spellingShingle A. Rambabu
K. C. James Raju
Polamarasetty P. Kumar
Ramakrishna S. S. Nuvvula
Baseem Khan
Effect of Oxygen Mixing Percentage on Mechanical and Microwave Dielectric Properties of SrBi4Ti4O15 Thin Films
Advances in Condensed Matter Physics
title Effect of Oxygen Mixing Percentage on Mechanical and Microwave Dielectric Properties of SrBi4Ti4O15 Thin Films
title_full Effect of Oxygen Mixing Percentage on Mechanical and Microwave Dielectric Properties of SrBi4Ti4O15 Thin Films
title_fullStr Effect of Oxygen Mixing Percentage on Mechanical and Microwave Dielectric Properties of SrBi4Ti4O15 Thin Films
title_full_unstemmed Effect of Oxygen Mixing Percentage on Mechanical and Microwave Dielectric Properties of SrBi4Ti4O15 Thin Films
title_short Effect of Oxygen Mixing Percentage on Mechanical and Microwave Dielectric Properties of SrBi4Ti4O15 Thin Films
title_sort effect of oxygen mixing percentage on mechanical and microwave dielectric properties of srbi4ti4o15 thin films
url http://dx.doi.org/10.1155/2023/8230336
work_keys_str_mv AT arambabu effectofoxygenmixingpercentageonmechanicalandmicrowavedielectricpropertiesofsrbi4ti4o15thinfilms
AT kcjamesraju effectofoxygenmixingpercentageonmechanicalandmicrowavedielectricpropertiesofsrbi4ti4o15thinfilms
AT polamarasettypkumar effectofoxygenmixingpercentageonmechanicalandmicrowavedielectricpropertiesofsrbi4ti4o15thinfilms
AT ramakrishnassnuvvula effectofoxygenmixingpercentageonmechanicalandmicrowavedielectricpropertiesofsrbi4ti4o15thinfilms
AT baseemkhan effectofoxygenmixingpercentageonmechanicalandmicrowavedielectricpropertiesofsrbi4ti4o15thinfilms