Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures
Electromagnetic (EM) absorbers and emitters have attracted much interest because of their versatile applications. A photonic heterostructure composed of silicon carbide (SiC) layer/germanium (Ge) cavity/distributed Bragg reflector (DBR) has been proposed. Selective emission properties have been inve...
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MDPI AG
2022-06-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/6/920 |
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| author | Chengxuan Gong Gaige Zheng |
| author_facet | Chengxuan Gong Gaige Zheng |
| author_sort | Chengxuan Gong |
| collection | DOAJ |
| description | Electromagnetic (EM) absorbers and emitters have attracted much interest because of their versatile applications. A photonic heterostructure composed of silicon carbide (SiC) layer/germanium (Ge) cavity/distributed Bragg reflector (DBR) has been proposed. Selective emission properties have been investigated through rigorous coupled wave analysis (RCWA) method. The results illustrate that Tamm phonon-polaritons can be excited, and the magnetic field is partially centralized at the junction of Ge cavity and SiC film, aimed to improve the interactions of photon–phonon. The absorptivity/emissivity of the structure can be better optimized by controlling the coupling of surface modes with the incident wave. Near-unity absorption can be achieved through optimizing the SiC grating/Ge cavity/distributed Bragg reflector (DBR) multilayer structure with geometrical parameters of <i>d<sub>s</sub></i> = 0.75 μm, <i>d<sub>g</sub></i> = 0.7 μm, <i>d</i><sub>1</sub> = 1.25 μm and <i>d</i><sub>2</sub> = 0.75 μm, respectively. Physical mechanism of selective emission characteristics is deliberated. In addition, the simulation results demonstrate that the emitter desensitizes to the incidence angle and polarization state in the mid-infrared (MIR) range. This research ameliorates the function of the selective emitters, which provides more efficient design for SiC-based systems. |
| first_indexed | 2024-03-09T23:00:53Z |
| format | Article |
| id | doaj.art-46cca938848342aaaaf021c9a92b0e9b |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T23:00:53Z |
| publishDate | 2022-06-01 |
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| series | Micromachines |
| spelling | doaj.art-46cca938848342aaaaf021c9a92b0e9b2023-11-23T18:01:36ZengMDPI AGMicromachines2072-666X2022-06-0113692010.3390/mi13060920Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based StructuresChengxuan Gong0Gaige Zheng1School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, ChinaSchool of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, ChinaElectromagnetic (EM) absorbers and emitters have attracted much interest because of their versatile applications. A photonic heterostructure composed of silicon carbide (SiC) layer/germanium (Ge) cavity/distributed Bragg reflector (DBR) has been proposed. Selective emission properties have been investigated through rigorous coupled wave analysis (RCWA) method. The results illustrate that Tamm phonon-polaritons can be excited, and the magnetic field is partially centralized at the junction of Ge cavity and SiC film, aimed to improve the interactions of photon–phonon. The absorptivity/emissivity of the structure can be better optimized by controlling the coupling of surface modes with the incident wave. Near-unity absorption can be achieved through optimizing the SiC grating/Ge cavity/distributed Bragg reflector (DBR) multilayer structure with geometrical parameters of <i>d<sub>s</sub></i> = 0.75 μm, <i>d<sub>g</sub></i> = 0.7 μm, <i>d</i><sub>1</sub> = 1.25 μm and <i>d</i><sub>2</sub> = 0.75 μm, respectively. Physical mechanism of selective emission characteristics is deliberated. In addition, the simulation results demonstrate that the emitter desensitizes to the incidence angle and polarization state in the mid-infrared (MIR) range. This research ameliorates the function of the selective emitters, which provides more efficient design for SiC-based systems.https://www.mdpi.com/2072-666X/13/6/920Tamm phonon-polaritonsselective emissiondistributed Bragg reflector (DBR)rigorous coupled wave analysis (RCWA) |
| spellingShingle | Chengxuan Gong Gaige Zheng Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures Micromachines Tamm phonon-polaritons selective emission distributed Bragg reflector (DBR) rigorous coupled wave analysis (RCWA) |
| title | Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures |
| title_full | Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures |
| title_fullStr | Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures |
| title_full_unstemmed | Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures |
| title_short | Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures |
| title_sort | selective properties of mid infrared tamm phonon polaritons emitter with silicon carbide based structures |
| topic | Tamm phonon-polaritons selective emission distributed Bragg reflector (DBR) rigorous coupled wave analysis (RCWA) |
| url | https://www.mdpi.com/2072-666X/13/6/920 |
| work_keys_str_mv | AT chengxuangong selectivepropertiesofmidinfraredtammphononpolaritonsemitterwithsiliconcarbidebasedstructures AT gaigezheng selectivepropertiesofmidinfraredtammphononpolaritonsemitterwithsiliconcarbidebasedstructures |