Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure
Ultraviolet-visible-near infrared broadband photodetectors have significant prospects in many fields such as image sensing, communication, chemical sensing, and day and nighttime surveillance. Hybrid one-dimensional (1D) and zero-dimensional (0D) materials are attractive for broadband-responsive pho...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-01-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/12/2/172 |
| _version_ | 1797481477504499712 |
|---|---|
| author | Jie You Yichi Zhang Maolong Yang Bo Wang Huiyong Hu Zimu Wang Jinze Li Hao Sun Liming Wang |
| author_facet | Jie You Yichi Zhang Maolong Yang Bo Wang Huiyong Hu Zimu Wang Jinze Li Hao Sun Liming Wang |
| author_sort | Jie You |
| collection | DOAJ |
| description | Ultraviolet-visible-near infrared broadband photodetectors have significant prospects in many fields such as image sensing, communication, chemical sensing, and day and nighttime surveillance. Hybrid one-dimensional (1D) and zero-dimensional (0D) materials are attractive for broadband-responsive photodetectors since its unique charges transfer characteristics and facile fabrication processes. Herein, a Si/ZnO nanowires/Ge quantum dots photodetector has been constructed via processes that combined electrospinning and spin-coating methods. A broadband response behavior from ultraviolet to near-infrared (from 250 to 1550 nm) is observed. The responsivity of the hybrid structure increases around three times from 550 to 1100 nm compared with the pure Si photodetector. Moreover, when the photodetector is illuminated by a light source exceeding 1100 nm, such as 1310 and 1550 nm, there is also a significant photoresponse. Additionally, the ZnO NWs/Ge quantum dots heterostructure is expected to be used in flexible substrates, which benefits from electrospinning and spin-coating processes. The strategy that combines 1D ZnO NWs and 0D solution-processed Ge QDs nanostructures may open a new avenue for flexible and broadband photodetector. |
| first_indexed | 2024-03-09T22:15:12Z |
| format | Article |
| id | doaj.art-4706d662b3b0477aa05063b12d44f6dd |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T22:15:12Z |
| publishDate | 2022-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-4706d662b3b0477aa05063b12d44f6dd2023-11-23T19:24:04ZengMDPI AGCrystals2073-43522022-01-0112217210.3390/cryst12020172Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid StructureJie You0Yichi Zhang1Maolong Yang2Bo Wang3Huiyong Hu4Zimu Wang5Jinze Li6Hao Sun7Liming Wang8Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaCollege of Engineering, Unviersity of California, Davis, CA 95616, USASchool of Physics and Optoelectronic Engineering, Xidian University, Xi’an 710071, ChinaSchool of Physics and Optoelectronic Engineering, Xidian University, Xi’an 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, ChinaUltraviolet-visible-near infrared broadband photodetectors have significant prospects in many fields such as image sensing, communication, chemical sensing, and day and nighttime surveillance. Hybrid one-dimensional (1D) and zero-dimensional (0D) materials are attractive for broadband-responsive photodetectors since its unique charges transfer characteristics and facile fabrication processes. Herein, a Si/ZnO nanowires/Ge quantum dots photodetector has been constructed via processes that combined electrospinning and spin-coating methods. A broadband response behavior from ultraviolet to near-infrared (from 250 to 1550 nm) is observed. The responsivity of the hybrid structure increases around three times from 550 to 1100 nm compared with the pure Si photodetector. Moreover, when the photodetector is illuminated by a light source exceeding 1100 nm, such as 1310 and 1550 nm, there is also a significant photoresponse. Additionally, the ZnO NWs/Ge quantum dots heterostructure is expected to be used in flexible substrates, which benefits from electrospinning and spin-coating processes. The strategy that combines 1D ZnO NWs and 0D solution-processed Ge QDs nanostructures may open a new avenue for flexible and broadband photodetector.https://www.mdpi.com/2073-4352/12/2/172hybrid structurebroadband photodetectionelectrospinningoptoelectronic |
| spellingShingle | Jie You Yichi Zhang Maolong Yang Bo Wang Huiyong Hu Zimu Wang Jinze Li Hao Sun Liming Wang Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure Crystals hybrid structure broadband photodetection electrospinning optoelectronic |
| title | Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure |
| title_full | Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure |
| title_fullStr | Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure |
| title_full_unstemmed | Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure |
| title_short | Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure |
| title_sort | ultraviolet visible near infrared broadband photodetector based on electronspun disorder zno nanowires ge quantum dots hybrid structure |
| topic | hybrid structure broadband photodetection electrospinning optoelectronic |
| url | https://www.mdpi.com/2073-4352/12/2/172 |
| work_keys_str_mv | AT jieyou ultravioletvisiblenearinfraredbroadbandphotodetectorbasedonelectronspundisorderznonanowiresgequantumdotshybridstructure AT yichizhang ultravioletvisiblenearinfraredbroadbandphotodetectorbasedonelectronspundisorderznonanowiresgequantumdotshybridstructure AT maolongyang ultravioletvisiblenearinfraredbroadbandphotodetectorbasedonelectronspundisorderznonanowiresgequantumdotshybridstructure AT bowang ultravioletvisiblenearinfraredbroadbandphotodetectorbasedonelectronspundisorderznonanowiresgequantumdotshybridstructure AT huiyonghu ultravioletvisiblenearinfraredbroadbandphotodetectorbasedonelectronspundisorderznonanowiresgequantumdotshybridstructure AT zimuwang ultravioletvisiblenearinfraredbroadbandphotodetectorbasedonelectronspundisorderznonanowiresgequantumdotshybridstructure AT jinzeli ultravioletvisiblenearinfraredbroadbandphotodetectorbasedonelectronspundisorderznonanowiresgequantumdotshybridstructure AT haosun ultravioletvisiblenearinfraredbroadbandphotodetectorbasedonelectronspundisorderznonanowiresgequantumdotshybridstructure AT limingwang ultravioletvisiblenearinfraredbroadbandphotodetectorbasedonelectronspundisorderznonanowiresgequantumdotshybridstructure |