Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
Abstract Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communicatio...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2020-12-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-020-78462-4 |
| _version_ | 1818840825116753920 |
|---|---|
| author | Paweł Holewa Marek Burakowski Anna Musiał Nicole Srocka David Quandt André Strittmatter Sven Rodt Stephan Reitzenstein Grzegorz Sęk |
| author_facet | Paweł Holewa Marek Burakowski Anna Musiał Nicole Srocka David Quandt André Strittmatter Sven Rodt Stephan Reitzenstein Grzegorz Sęk |
| author_sort | Paweł Holewa |
| collection | DOAJ |
| description | Abstract Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band at 1.3 μm. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single-photon emission with a purity of $${g}_{50K}^{(2)}\left(0\right)=0.13$$ g 50 K ( 2 ) 0 = 0.13 up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated (e.g., Stirling cryocooler compatible) temperatures in the telecom O-band and highlight means for improvements in their performance. |
| first_indexed | 2024-12-19T04:16:20Z |
| format | Article |
| id | doaj.art-472899499457479ba2de6becf0443ad9 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-19T04:16:20Z |
| publishDate | 2020-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-472899499457479ba2de6becf0443ad92022-12-21T20:36:17ZengNature PortfolioScientific Reports2045-23222020-12-011011910.1038/s41598-020-78462-4Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-bandPaweł Holewa0Marek Burakowski1Anna Musiał2Nicole Srocka3David Quandt4André Strittmatter5Sven Rodt6Stephan Reitzenstein7Grzegorz Sęk8Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and TechnologyLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and TechnologyLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and TechnologyInstitute of Solid State Physics, Technische Universität BerlinInstitute of Solid State Physics, Technische Universität BerlinInstitute of Solid State Physics, Technische Universität BerlinInstitute of Solid State Physics, Technische Universität BerlinInstitute of Solid State Physics, Technische Universität BerlinLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and TechnologyAbstract Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band at 1.3 μm. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single-photon emission with a purity of $${g}_{50K}^{(2)}\left(0\right)=0.13$$ g 50 K ( 2 ) 0 = 0.13 up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated (e.g., Stirling cryocooler compatible) temperatures in the telecom O-band and highlight means for improvements in their performance.https://doi.org/10.1038/s41598-020-78462-4 |
| spellingShingle | Paweł Holewa Marek Burakowski Anna Musiał Nicole Srocka David Quandt André Strittmatter Sven Rodt Stephan Reitzenstein Grzegorz Sęk Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band Scientific Reports |
| title | Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
| title_full | Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
| title_fullStr | Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
| title_full_unstemmed | Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
| title_short | Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band |
| title_sort | thermal stability of emission from single ingaas gaas quantum dots at the telecom o band |
| url | https://doi.org/10.1038/s41598-020-78462-4 |
| work_keys_str_mv | AT pawełholewa thermalstabilityofemissionfromsingleingaasgaasquantumdotsatthetelecomoband AT marekburakowski thermalstabilityofemissionfromsingleingaasgaasquantumdotsatthetelecomoband AT annamusiał thermalstabilityofemissionfromsingleingaasgaasquantumdotsatthetelecomoband AT nicolesrocka thermalstabilityofemissionfromsingleingaasgaasquantumdotsatthetelecomoband AT davidquandt thermalstabilityofemissionfromsingleingaasgaasquantumdotsatthetelecomoband AT andrestrittmatter thermalstabilityofemissionfromsingleingaasgaasquantumdotsatthetelecomoband AT svenrodt thermalstabilityofemissionfromsingleingaasgaasquantumdotsatthetelecomoband AT stephanreitzenstein thermalstabilityofemissionfromsingleingaasgaasquantumdotsatthetelecomoband AT grzegorzsek thermalstabilityofemissionfromsingleingaasgaasquantumdotsatthetelecomoband |