Design, Characterization and Analysis of a 0.35 μm CMOS SPAD
Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs de...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2014-12-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/14/12/22773 |
| _version_ | 1818000964453400576 |
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| author | Khalil Jradi Denis Pellion Dominique Ginhac |
| author_facet | Khalil Jradi Denis Pellion Dominique Ginhac |
| author_sort | Khalil Jradi |
| collection | DOAJ |
| description | Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 µm down to 5 µm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD. |
| first_indexed | 2024-04-14T03:28:00Z |
| format | Article |
| id | doaj.art-47714bb5170d45ad8afb6a992d551d5a |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-14T03:28:00Z |
| publishDate | 2014-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-47714bb5170d45ad8afb6a992d551d5a2022-12-22T02:15:04ZengMDPI AGSensors1424-82202014-12-011412227732278410.3390/s141222773s141222773Design, Characterization and Analysis of a 0.35 μm CMOS SPADKhalil Jradi0Denis Pellion1Dominique Ginhac2Laboratory Electronique, Informatique et Image, Le2i UMR CNRS 6306, Aile de l'ingénieur-9, Avenue Alain Savary-BP 47870, Dijon Cedex 21078, FranceLaboratory Electronique, Informatique et Image, Le2i UMR CNRS 6306, Aile de l'ingénieur-9, Avenue Alain Savary-BP 47870, Dijon Cedex 21078, FranceLaboratory Electronique, Informatique et Image, Le2i UMR CNRS 6306, Aile de l'ingénieur-9, Avenue Alain Savary-BP 47870, Dijon Cedex 21078, FranceMost of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 µm down to 5 µm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD.http://www.mdpi.com/1424-8220/14/12/22773etectorsavalanche photodiodes (APDs)optoelectronicsphotonic integrated circuitintegrated optoelectronic circuits |
| spellingShingle | Khalil Jradi Denis Pellion Dominique Ginhac Design, Characterization and Analysis of a 0.35 μm CMOS SPAD Sensors etectors avalanche photodiodes (APDs) optoelectronics photonic integrated circuit integrated optoelectronic circuits |
| title | Design, Characterization and Analysis of a 0.35 μm CMOS SPAD |
| title_full | Design, Characterization and Analysis of a 0.35 μm CMOS SPAD |
| title_fullStr | Design, Characterization and Analysis of a 0.35 μm CMOS SPAD |
| title_full_unstemmed | Design, Characterization and Analysis of a 0.35 μm CMOS SPAD |
| title_short | Design, Characterization and Analysis of a 0.35 μm CMOS SPAD |
| title_sort | design characterization and analysis of a 0 35 μm cmos spad |
| topic | etectors avalanche photodiodes (APDs) optoelectronics photonic integrated circuit integrated optoelectronic circuits |
| url | http://www.mdpi.com/1424-8220/14/12/22773 |
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