The electronic structure of Tb silicide nanowires on Si(001)
The electronic structure of Tb silicide nanowires on planar and vicinal Si(001) surfaces was investigated using scanning tunneling spectroscopy, core-level photoemission spectroscopy, and angle-resolved photoemission spectroscopy. The nanowires are metallic and their formation results in a band bend...
Main Authors: | S Appelfeller, M Franz, H-F Jirschik, J Große, M Dähne |
---|---|
Format: | Article |
Language: | English |
Published: |
IOP Publishing
2016-01-01
|
Series: | New Journal of Physics |
Subjects: | |
Online Access: | https://doi.org/10.1088/1367-2630/18/11/113005 |
Similar Items
-
Geometric Study on Silicon Nanowires Fabricated via Silver-assisted Electroless Etching
by: Neil Irvin F. Cabello, et al.
Published: (2017-06-01) -
Frequency modulated self-oscillation and phase inertia in a synchronized nanowire mechanical resonator
by: T Barois, et al.
Published: (2014-01-01) -
Germanium segregation in CVD grown SiGe layers
by: Novikau Andrei, et al.
Published: (2010-02-01) -
STM investigation of cobalt silicide nanostructures’ growth on Si(111)-(√19 × √19) substrate
by: Cegiel Maciej, et al.
Published: (2009-06-01) -
Degradation of Yb–Gd–Ti-Si middle entropy silicides in oxidizing atmosphere
by: Yutaro Arai, et al.
Published: (2022-01-01)