Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions
Abstract Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-04-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2513-6 |
| _version_ | 1797712390770393088 |
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| author | Caihong Jia Jiachen Li Guang Yang Yonghai Chen Weifeng Zhang |
| author_facet | Caihong Jia Jiachen Li Guang Yang Yonghai Chen Weifeng Zhang |
| author_sort | Caihong Jia |
| collection | DOAJ |
| description | Abstract Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 105 ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions. |
| first_indexed | 2024-03-12T07:21:04Z |
| format | Article |
| id | doaj.art-479ec0543d0f483c837259e85b2ce08a |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:21:04Z |
| publishDate | 2018-04-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-479ec0543d0f483c837259e85b2ce08a2023-09-02T22:25:10ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-04-011311610.1186/s11671-018-2513-6Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial HeterojunctionsCaihong Jia0Jiachen Li1Guang Yang2Yonghai Chen3Weifeng Zhang4Henan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics and Electronics, Henan UniversityHenan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics and Electronics, Henan UniversityHenan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics and Electronics, Henan UniversityKey Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of SciencesHenan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics and Electronics, Henan UniversityAbstract Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 105 ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.http://link.springer.com/article/10.1186/s11671-018-2513-6FerroelectricAsymmetric resistive switchingFerroelectric/semiconductor heterojunctions |
| spellingShingle | Caihong Jia Jiachen Li Guang Yang Yonghai Chen Weifeng Zhang Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions Nanoscale Research Letters Ferroelectric Asymmetric resistive switching Ferroelectric/semiconductor heterojunctions |
| title | Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions |
| title_full | Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions |
| title_fullStr | Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions |
| title_full_unstemmed | Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions |
| title_short | Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions |
| title_sort | ferroelectric field effect induced asymmetric resistive switching effect in batio3 nb srtio3 epitaxial heterojunctions |
| topic | Ferroelectric Asymmetric resistive switching Ferroelectric/semiconductor heterojunctions |
| url | http://link.springer.com/article/10.1186/s11671-018-2513-6 |
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