Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining Processes
This letter proposes a method for utilizing a positive photoresist, Shipley 1805, as a sacrificial layer for sub-180 °C fabrication process flows. In the proposed process, the sacrificial layer is etched at the end to release the structures using a relatively fast wet-etching technique emplo...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2018-05-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2072-666X/9/5/231 |
| _version_ | 1818855703972937728 |
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| author | Hani H. Tawfik Mohannad Y. Elsayed Frederic Nabki Mourad N. El-Gamal |
| author_facet | Hani H. Tawfik Mohannad Y. Elsayed Frederic Nabki Mourad N. El-Gamal |
| author_sort | Hani H. Tawfik |
| collection | DOAJ |
| description | This letter proposes a method for utilizing a positive photoresist, Shipley 1805, as a sacrificial layer for sub-180 °C fabrication process flows. In the proposed process, the sacrificial layer is etched at the end to release the structures using a relatively fast wet-etching technique employing resist remover and a critical point dryer (CPD). This technique allows high etching selectivity over a large number of materials, including silicon-based structural materials such as silicon-carbide, metals such as titanium and aluminum, and cured polymers. This selectivity, as well as the low processing thermal budget, introduces more flexibility in material selection for monolithic integration above complementary metal oxide semiconductor (CMOS) as well as flexible substrates. |
| first_indexed | 2024-12-19T08:12:50Z |
| format | Article |
| id | doaj.art-47bbe8e93ed344d1ab77e31e0d9fb8d6 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-19T08:12:50Z |
| publishDate | 2018-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-47bbe8e93ed344d1ab77e31e0d9fb8d62022-12-21T20:29:34ZengMDPI AGMicromachines2072-666X2018-05-019523110.3390/mi9050231mi9050231Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining ProcessesHani H. Tawfik0Mohannad Y. Elsayed1Frederic Nabki2Mourad N. El-Gamal3Department of Electrical and Computer Engineering, McGill University, Montreal, QC H3A 0E9, CanadaMEMS Vision Intl., Montreal, QC H1Z 2K4, CanadaÉcole de Technologie Supérieure (ETS), Montreal, QC H3C 1K3, CanadaDepartment of Electrical and Computer Engineering, McGill University, Montreal, QC H3A 0E9, CanadaThis letter proposes a method for utilizing a positive photoresist, Shipley 1805, as a sacrificial layer for sub-180 °C fabrication process flows. In the proposed process, the sacrificial layer is etched at the end to release the structures using a relatively fast wet-etching technique employing resist remover and a critical point dryer (CPD). This technique allows high etching selectivity over a large number of materials, including silicon-based structural materials such as silicon-carbide, metals such as titanium and aluminum, and cured polymers. This selectivity, as well as the low processing thermal budget, introduces more flexibility in material selection for monolithic integration above complementary metal oxide semiconductor (CMOS) as well as flexible substrates.http://www.mdpi.com/2072-666X/9/5/231Silicon carbide (SiC)surface micromachiningphotoresistsacrificial layerlow thermal budget |
| spellingShingle | Hani H. Tawfik Mohannad Y. Elsayed Frederic Nabki Mourad N. El-Gamal Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining Processes Micromachines Silicon carbide (SiC) surface micromachining photoresist sacrificial layer low thermal budget |
| title | Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining Processes |
| title_full | Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining Processes |
| title_fullStr | Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining Processes |
| title_full_unstemmed | Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining Processes |
| title_short | Hard-Baked Photoresist as a Sacrificial Layer for Sub-180 °C Surface Micromachining Processes |
| title_sort | hard baked photoresist as a sacrificial layer for sub 180 °c surface micromachining processes |
| topic | Silicon carbide (SiC) surface micromachining photoresist sacrificial layer low thermal budget |
| url | http://www.mdpi.com/2072-666X/9/5/231 |
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