| Summary: | Energy efficiency is becoming one of the most important topics in electronics. Among others, wide band-gap semiconductors can raise efficiency and lead to shrinking volumes in power conversion systems. As different markets have regulations that require different designs, it is necessary to cope with a large variety of similar designs. By using effective modeling and simulation strategies, the efforts of building these variants can be diminished, and re-designs can be avoided. In this paper, we present a universally valid way to come to reasonable simulation results for conducted emissions of a power electronic system in the frequency range from 150 kHz up to 400 MHz. After giving an overview of the state-of-the-art, the authors show how to implement and set up a simulation environment for a gallium-nitride (GaN) power converter. It shows how to differentiate between important and not that important components for Electromagnetic Compatibility (EMC), how to model these components, the printed circuit board, the load, and the setup, including the Line Impedance Stabilization Networks (LISNs), etc. Multiport S-parameter strategies as well as vector fitting methods are employed. Computational costs are kept low, and all simulations are verified with measurements; thus, this model is valid up to 400 MHz.
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