A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array
In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a cavity to enhance the gain and reduce surface w...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9084082/ |
| _version_ | 1818875874698592256 |
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| author | Hua Zhu Xiuping Li Zhihang Qi Jun Xiao |
| author_facet | Hua Zhu Xiuping Li Zhihang Qi Jun Xiao |
| author_sort | Hua Zhu |
| collection | DOAJ |
| description | In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a cavity to enhance the gain and reduce surface waves. The 1 x 2 OSAR antenna array is designed and fabricated with the die area of 550 x 1100μm<sup>2</sup>. The measured -10-dB impedance bandwidth is more than 17 GHz (303-320 GHz). The proposed on-chip antenna array is achieved a measurement perk gain of 4.1 dBi at 320 GHz and the simulated radiation efficiency of 38 %. |
| first_indexed | 2024-12-19T13:33:26Z |
| format | Article |
| id | doaj.art-484e4b21919947c8a876074a706759fc |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-19T13:33:26Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-484e4b21919947c8a876074a706759fc2022-12-21T20:19:18ZengIEEEIEEE Access2169-35362020-01-018842828428910.1109/ACCESS.2020.29918689084082A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna ArrayHua Zhu0https://orcid.org/0000-0002-3578-3880Xiuping Li1Zhihang Qi2https://orcid.org/0000-0002-5488-6404Jun Xiao3https://orcid.org/0000-0003-2114-6781School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, ChinaSchool of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, ChinaSchool of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, ChinaSchool of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, ChinaIn this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a cavity to enhance the gain and reduce surface waves. The 1 x 2 OSAR antenna array is designed and fabricated with the die area of 550 x 1100μm<sup>2</sup>. The measured -10-dB impedance bandwidth is more than 17 GHz (303-320 GHz). The proposed on-chip antenna array is achieved a measurement perk gain of 4.1 dBi at 320 GHz and the simulated radiation efficiency of 38 %.https://ieeexplore.ieee.org/document/9084082/An octagonal shorted annular ringon-chip antenna arrayterahertz (THz)130-nm SiGe BiCMOS technology |
| spellingShingle | Hua Zhu Xiuping Li Zhihang Qi Jun Xiao A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array IEEE Access An octagonal shorted annular ring on-chip antenna array terahertz (THz) 130-nm SiGe BiCMOS technology |
| title | A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array |
| title_full | A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array |
| title_fullStr | A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array |
| title_full_unstemmed | A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array |
| title_short | A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array |
| title_sort | 320 ghz octagonal shorted annular ring on chip antenna array |
| topic | An octagonal shorted annular ring on-chip antenna array terahertz (THz) 130-nm SiGe BiCMOS technology |
| url | https://ieeexplore.ieee.org/document/9084082/ |
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