Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition
Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characteriz...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5118700 |
| Summary: | Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characterization from X-ray diffraction as well as Raman spectra analysis demonstrated the monoclinic structure of the films. β-Ga2O3 film deposited at 200 °C showed similar growth rate as well as optical bandgap values with films grown at higher temperatures from 300 to 500 °C, indicating the enhanced reaction between Ga and oxygen species during the deposition process with the assistant of plasma at low temperature. The low temperature growth of β-Ga2O3 film paves the way to be compatible with the established lithography of semiconductor microfabrication processes. |
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| ISSN: | 2158-3226 |