Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition
Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characteriz...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5118700 |
| _version_ | 1828489144136892416 |
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| author | Congyu Hu Fabi Zhang Katsuhiko Saito Tooru Tanaka Qixin Guo |
| author_facet | Congyu Hu Fabi Zhang Katsuhiko Saito Tooru Tanaka Qixin Guo |
| author_sort | Congyu Hu |
| collection | DOAJ |
| description | Monoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characterization from X-ray diffraction as well as Raman spectra analysis demonstrated the monoclinic structure of the films. β-Ga2O3 film deposited at 200 °C showed similar growth rate as well as optical bandgap values with films grown at higher temperatures from 300 to 500 °C, indicating the enhanced reaction between Ga and oxygen species during the deposition process with the assistant of plasma at low temperature. The low temperature growth of β-Ga2O3 film paves the way to be compatible with the established lithography of semiconductor microfabrication processes. |
| first_indexed | 2024-12-11T10:20:53Z |
| format | Article |
| id | doaj.art-487e166cc7444101a00e9e2639fca817 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T10:20:53Z |
| publishDate | 2019-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-487e166cc7444101a00e9e2639fca8172022-12-22T01:11:26ZengAIP Publishing LLCAIP Advances2158-32262019-08-0198085022085022-410.1063/1.5118700081908ADVLow temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser depositionCongyu Hu0Fabi Zhang1Katsuhiko Saito2Tooru Tanaka3Qixin Guo4Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, JapanDepartment of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, JapanDepartment of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, JapanDepartment of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, JapanDepartment of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, JapanMonoclinic β-Ga2O3 thin films with (-201) orientation have been fabricated at substrate temperature as low as 200 °C by using plasma assisted pulsed laser deposition. The film showed high transmittance of over 80% with clear fringes in the wavelength range from 300 to 1000 nm. Structural characterization from X-ray diffraction as well as Raman spectra analysis demonstrated the monoclinic structure of the films. β-Ga2O3 film deposited at 200 °C showed similar growth rate as well as optical bandgap values with films grown at higher temperatures from 300 to 500 °C, indicating the enhanced reaction between Ga and oxygen species during the deposition process with the assistant of plasma at low temperature. The low temperature growth of β-Ga2O3 film paves the way to be compatible with the established lithography of semiconductor microfabrication processes.http://dx.doi.org/10.1063/1.5118700 |
| spellingShingle | Congyu Hu Fabi Zhang Katsuhiko Saito Tooru Tanaka Qixin Guo Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition AIP Advances |
| title | Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition |
| title_full | Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition |
| title_fullStr | Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition |
| title_full_unstemmed | Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition |
| title_short | Low temperature growth of Ga2O3 films on sapphire substrates by plasma assisted pulsed laser deposition |
| title_sort | low temperature growth of ga2o3 films on sapphire substrates by plasma assisted pulsed laser deposition |
| url | http://dx.doi.org/10.1063/1.5118700 |
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