Stability to irradiation of SiGe whisker crystals used for sensors of physical values
An influence of g-irradiation (Co60) with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03) whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studied. It is shown that whisker crystals resistance faint...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2011-04-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2011/1-2_2011/pdf/03.zip |
| _version_ | 1819237584067362816 |
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| author | Druzhinin A. A. Ostrovskiy I. P. Khoverko Yu. N. Litovchenko P. G. Pavlovska N. T. Pavlovskiy Yu. V. Tsmots V. M. Povarchuk V. Yu. |
| author_facet | Druzhinin A. A. Ostrovskiy I. P. Khoverko Yu. N. Litovchenko P. G. Pavlovska N. T. Pavlovskiy Yu. V. Tsmots V. M. Povarchuk V. Yu. |
| author_sort | Druzhinin A. A. |
| collection | DOAJ |
| description | An influence of g-irradiation (Co60) with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03) whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studied. It is shown that whisker crystals resistance faintly varies under irradiation with doze 2·1017 сm–2, while their magnetoresistance substantially changes. The strain sensors stable to irradiation action operating in high magnetic fields on the base of the whiskers have been designed. |
| first_indexed | 2024-12-23T13:22:39Z |
| format | Article |
| id | doaj.art-4882b9f9e9294550babe8be6c0ceb844 |
| institution | Directory Open Access Journal |
| issn | 2225-5818 |
| language | English |
| last_indexed | 2024-12-23T13:22:39Z |
| publishDate | 2011-04-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj.art-4882b9f9e9294550babe8be6c0ceb8442022-12-21T17:45:24ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182011-04-011-21012Stability to irradiation of SiGe whisker crystals used for sensors of physical valuesDruzhinin A. A.Ostrovskiy I. P.Khoverko Yu. N.Litovchenko P. G.Pavlovska N. T.Pavlovskiy Yu. V.Tsmots V. M.Povarchuk V. Yu.An influence of g-irradiation (Co60) with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03) whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studied. It is shown that whisker crystals resistance faintly varies under irradiation with doze 2·1017 сm–2, while their magnetoresistance substantially changes. The strain sensors stable to irradiation action operating in high magnetic fields on the base of the whiskers have been designed.http://www.tkea.com.ua/tkea/2011/1-2_2011/pdf/03.zipwhiskersilicon-germaniumgagegamma irradiation |
| spellingShingle | Druzhinin A. A. Ostrovskiy I. P. Khoverko Yu. N. Litovchenko P. G. Pavlovska N. T. Pavlovskiy Yu. V. Tsmots V. M. Povarchuk V. Yu. Stability to irradiation of SiGe whisker crystals used for sensors of physical values Tekhnologiya i Konstruirovanie v Elektronnoi Apparature whisker silicon-germanium gage gamma irradiation |
| title | Stability to irradiation of SiGe whisker crystals used for sensors of physical values |
| title_full | Stability to irradiation of SiGe whisker crystals used for sensors of physical values |
| title_fullStr | Stability to irradiation of SiGe whisker crystals used for sensors of physical values |
| title_full_unstemmed | Stability to irradiation of SiGe whisker crystals used for sensors of physical values |
| title_short | Stability to irradiation of SiGe whisker crystals used for sensors of physical values |
| title_sort | stability to irradiation of sige whisker crystals used for sensors of physical values |
| topic | whisker silicon-germanium gage gamma irradiation |
| url | http://www.tkea.com.ua/tkea/2011/1-2_2011/pdf/03.zip |
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