Topological quantum weak antilocalization limit and anomalous Hall effect in semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey heterostructure
Magnetic topological insulator hosts both a non-trivial surface band and quantum anomalous Hall effect when tuning the time reversal symmetry by various chemical doping into the system. Using molecular beam epitaxy, we have synthesized Bi _2−x Cr _x Se _3 /Bi _2 Se _3−y Te _y heterostructure, which...
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IOP Publishing
2019-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ab573f |
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| author | Moorthi Kanagaraj Sun Yizhe Jiai Ning Yafei Zhao Jian Tu Wenqin Zou Liang He |
| author_facet | Moorthi Kanagaraj Sun Yizhe Jiai Ning Yafei Zhao Jian Tu Wenqin Zou Liang He |
| author_sort | Moorthi Kanagaraj |
| collection | DOAJ |
| description | Magnetic topological insulator hosts both a non-trivial surface band and quantum anomalous Hall effect when tuning the time reversal symmetry by various chemical doping into the system. Using molecular beam epitaxy, we have synthesized Bi _2−x Cr _x Se _3 /Bi _2 Se _3−y Te _y heterostructure, which was scrutinized via in situ angle resolved photoemission spectroscopy, ex situ x-ray diffraction, Raman, and x-ray photoemission characteristics analyzing techniques. We used the Hikami-Larkin-Nagaoka formula for quantifying the weak antilocalization limit in Bi _2−x Cr _x Se _3 and Bi _2 Se _3−y Te _y non-magnetic layer coupling near the ferromagnetic transition temperature (∼7 K). A higher concentration of Cr (1.5%) in Bi site leads to bulk carrier density for entire cooling temperature with a bandgap of 85 meV. The proximity effect of Te doped Bi _2 Se _3 with magnetic topological insulator degrades the ferromagnetic response for this heterostructure. Our study suggests that the manipulation of disorder free magnetic top layer and fine tuning of spin–orbit coupling strength in the bottom topological insulator can be helpful to understand the high temperature quantum anomalous Hall effect towards relativistic quantum electronics applications. |
| first_indexed | 2024-03-12T15:46:52Z |
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| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:46:52Z |
| publishDate | 2019-01-01 |
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| series | Materials Research Express |
| spelling | doaj.art-48832c96ab94467db929d0c94548dd362023-08-09T15:22:26ZengIOP PublishingMaterials Research Express2053-15912019-01-017101640110.1088/2053-1591/ab573fTopological quantum weak antilocalization limit and anomalous Hall effect in semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey heterostructureMoorthi Kanagaraj0https://orcid.org/0000-0001-7339-714XSun Yizhe1Jiai Ning2Yafei Zhao3Jian Tu4Wenqin Zou5Liang He6School of Electronic Science and Engineering, Nanjing University , Nanjing 210093, People’s Republic of ChinaSchool of Electronic Science and Engineering, Nanjing University , Nanjing 210093, People’s Republic of ChinaSchool of Electronic Science and Engineering, Nanjing University , Nanjing 210093, People’s Republic of ChinaSchool of Electronic Science and Engineering, Nanjing University , Nanjing 210093, People’s Republic of ChinaSchool of Electronic Science and Engineering, Nanjing University , Nanjing 210093, People’s Republic of ChinaNational Lab of Solid State Microstructures, Department of Physics, Nanjing University , Nanjing 210093, People’s Republic of ChinaSchool of Electronic Science and Engineering, Nanjing University , Nanjing 210093, People’s Republic of China; York-Nanjing Joint Center for Spintronics and Nano Engineering (YNJC), School of Electronics Science and Engineering, Nanjing University , Nanjing 210093, People’s Republic of ChinaMagnetic topological insulator hosts both a non-trivial surface band and quantum anomalous Hall effect when tuning the time reversal symmetry by various chemical doping into the system. Using molecular beam epitaxy, we have synthesized Bi _2−x Cr _x Se _3 /Bi _2 Se _3−y Te _y heterostructure, which was scrutinized via in situ angle resolved photoemission spectroscopy, ex situ x-ray diffraction, Raman, and x-ray photoemission characteristics analyzing techniques. We used the Hikami-Larkin-Nagaoka formula for quantifying the weak antilocalization limit in Bi _2−x Cr _x Se _3 and Bi _2 Se _3−y Te _y non-magnetic layer coupling near the ferromagnetic transition temperature (∼7 K). A higher concentration of Cr (1.5%) in Bi site leads to bulk carrier density for entire cooling temperature with a bandgap of 85 meV. The proximity effect of Te doped Bi _2 Se _3 with magnetic topological insulator degrades the ferromagnetic response for this heterostructure. Our study suggests that the manipulation of disorder free magnetic top layer and fine tuning of spin–orbit coupling strength in the bottom topological insulator can be helpful to understand the high temperature quantum anomalous Hall effect towards relativistic quantum electronics applications.https://doi.org/10.1088/2053-1591/ab573fmagnetic topological insulatorepitaxial growthproximity effectquantum anomalous Hall effectweak antilocalization |
| spellingShingle | Moorthi Kanagaraj Sun Yizhe Jiai Ning Yafei Zhao Jian Tu Wenqin Zou Liang He Topological quantum weak antilocalization limit and anomalous Hall effect in semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey heterostructure Materials Research Express magnetic topological insulator epitaxial growth proximity effect quantum anomalous Hall effect weak antilocalization |
| title | Topological quantum weak antilocalization limit and anomalous Hall effect in semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey heterostructure |
| title_full | Topological quantum weak antilocalization limit and anomalous Hall effect in semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey heterostructure |
| title_fullStr | Topological quantum weak antilocalization limit and anomalous Hall effect in semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey heterostructure |
| title_full_unstemmed | Topological quantum weak antilocalization limit and anomalous Hall effect in semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey heterostructure |
| title_short | Topological quantum weak antilocalization limit and anomalous Hall effect in semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey heterostructure |
| title_sort | topological quantum weak antilocalization limit and anomalous hall effect in semimagnetic bi2 xcrxse3 bi2se3 ytey heterostructure |
| topic | magnetic topological insulator epitaxial growth proximity effect quantum anomalous Hall effect weak antilocalization |
| url | https://doi.org/10.1088/2053-1591/ab573f |
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