| Summary: | The oxidation process was studied for the synthesized low-layer Ti<sub>2</sub>CT<sub>x</sub> MXene deposited on a special Al<sub>2</sub>O<sub>3</sub>/Pt sensor substrate using in situ Raman spectroscopy. It is noted that on the ceramic parts of the substrate (Al<sub>2</sub>O<sub>3</sub>), the beginning of oxidation (appearance of anatase mod phase) is observed already at 316 °C, in comparison with platinum, for which the appearance of anatase is noted only at 372 °C. At the temperature 447 °C, the initial MXene film is completely oxidized to TiO<sub>2</sub>. Using scanning electron microscopy and atomic force microscopy, the microstructure and dispersity of the obtained MXene film were studied. It was found that the obtained films exhibit chemoresistive responses to the detection of a wide group of gases, H<sub>2</sub>, CO, NH<sub>3</sub>, C<sub>6</sub>H<sub>6</sub>, C<sub>3</sub>H<sub>6</sub>O, CH<sub>4</sub>, C<sub>2</sub>H<sub>5</sub>OH and O<sub>2</sub>, at room temperature and RH = 50%. The highest sensitivity is observed for NH<sub>3</sub>. The partial oxidation of the Ti<sub>2</sub>CT<sub>x</sub> MXene was shown to favorably affect the gas-sensitive properties.
|
|---|