Elucidating the local structure of V substitutes in In2S3 as potential intermediate band material by x-ray absorption spectroscopy and first principles calculations

Elucidating the local structure of V substitutes in In2S3 as potential intermediate band material by x-ray absorption spectroscopy and first principles calculations

Vanadium doped indium sulphide, In _2 S _3 :V, is studied as a potential absorber material for intermediate band (IB) solar cells. Based on electronic considerations, it is usually assumed that V occupies octahedrally coordinated In sites, although geometrical considerations would favour tetrahedral...

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Bibliographic Details
Main Authors: Elaheh Ghorbani, Martin Schiller, Hans H Falk, Leonard A Wägele, Stefanie Eckner, Francesco d’Acapito, Roland Scheer, Karsten Albe, Claudia S Schnohr
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:JPhys Energy
Subjects:
In2S3
indium sulphide
vanadium
local structure
thin films
x-ray absorption spectroscopy
Online Access:https://doi.org/10.1088/2515-7655/acd95b

Internet

https://doi.org/10.1088/2515-7655/acd95b

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