The thermal stability of epitaxial GeSn layers

The thermal stability of epitaxial GeSn layers

We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further...

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Bibliographic Details
Main Authors:	P. Zaumseil, Y. Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, G. Capellini
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-07-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.5036728

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