Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N
Abstract Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-o...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-07-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-023-39649-1 |
| _version_ | 1797784480266584064 |
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| author | Fen Xue Shy-Jay Lin Mingyuan Song William Hwang Christoph Klewe Chien-Min Lee Emrah Turgut Padraic Shafer Arturas Vailionis Yen-Lin Huang Wilman Tsai Xinyu Bao Shan X. Wang |
| author_facet | Fen Xue Shy-Jay Lin Mingyuan Song William Hwang Christoph Klewe Chien-Min Lee Emrah Turgut Padraic Shafer Arturas Vailionis Yen-Lin Huang Wilman Tsai Xinyu Bao Shan X. Wang |
| author_sort | Fen Xue |
| collection | DOAJ |
| description | Abstract Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-orbit torques (SOTs) in a variety of materials for field-free type-z SOT switching. Here, we report on the corresponding type-x configuration, showing significant in-plane unconventional spin polarizations from sputtered ultrathin [Pt/Co]N, which are either highly textured on single crystalline MgO substrates or randomly textured on SiO2 coated Si substrates. The unconventional spin currents generated in the low-dimensional Co films result from the strong orbital magnetic moment, which has been observed by X-ray magnetic circular dichroism (XMCD) measurement. The x-polarized spin torque efficiency reaches up to −0.083 and favors complete field-free switching of CoFeB magnetized along the in-plane charge current direction. Micromagnetic simulations additionally demonstrate its lower switching current than type-y switching, especially in narrow current pulses. Our work provides additional pathways for electrical manipulation of spintronic devices in the pursuit of high-speed, high-density, and low-energy non-volatile memory. |
| first_indexed | 2024-03-13T00:40:30Z |
| format | Article |
| id | doaj.art-48aff6bc59c3467985f35fc89665a5de |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-03-13T00:40:30Z |
| publishDate | 2023-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-48aff6bc59c3467985f35fc89665a5de2023-07-09T11:18:55ZengNature PortfolioNature Communications2041-17232023-07-011411910.1038/s41467-023-39649-1Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]NFen Xue0Shy-Jay Lin1Mingyuan Song2William Hwang3Christoph Klewe4Chien-Min Lee5Emrah Turgut6Padraic Shafer7Arturas Vailionis8Yen-Lin Huang9Wilman Tsai10Xinyu Bao11Shan X. Wang12Department of Electrical Engineering, Stanford UniversityTaiwan Semiconductor Manufacturing CompanyTaiwan Semiconductor Manufacturing CompanyDepartment of Electrical Engineering, Stanford UniversityAdvanced Light Source, Lawrence Berkeley National LaboratoryTaiwan Semiconductor Manufacturing CompanyTaiwan Semiconductor Manufacturing CompanyAdvanced Light Source, Lawrence Berkeley National LaboratoryStanford Nano Shared Facilities, Stanford UniversityTaiwan Semiconductor Manufacturing CompanyDepartment of Materials Science and Engineering, Stanford UniversityTaiwan Semiconductor Manufacturing CompanyDepartment of Electrical Engineering, Stanford UniversityAbstract Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-orbit torques (SOTs) in a variety of materials for field-free type-z SOT switching. Here, we report on the corresponding type-x configuration, showing significant in-plane unconventional spin polarizations from sputtered ultrathin [Pt/Co]N, which are either highly textured on single crystalline MgO substrates or randomly textured on SiO2 coated Si substrates. The unconventional spin currents generated in the low-dimensional Co films result from the strong orbital magnetic moment, which has been observed by X-ray magnetic circular dichroism (XMCD) measurement. The x-polarized spin torque efficiency reaches up to −0.083 and favors complete field-free switching of CoFeB magnetized along the in-plane charge current direction. Micromagnetic simulations additionally demonstrate its lower switching current than type-y switching, especially in narrow current pulses. Our work provides additional pathways for electrical manipulation of spintronic devices in the pursuit of high-speed, high-density, and low-energy non-volatile memory.https://doi.org/10.1038/s41467-023-39649-1 |
| spellingShingle | Fen Xue Shy-Jay Lin Mingyuan Song William Hwang Christoph Klewe Chien-Min Lee Emrah Turgut Padraic Shafer Arturas Vailionis Yen-Lin Huang Wilman Tsai Xinyu Bao Shan X. Wang Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N Nature Communications |
| title | Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N |
| title_full | Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N |
| title_fullStr | Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N |
| title_full_unstemmed | Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N |
| title_short | Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N |
| title_sort | field free spin orbit torque switching assisted by in plane unconventional spin torque in ultrathin pt co n |
| url | https://doi.org/10.1038/s41467-023-39649-1 |
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