Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuit
As a current driven power device, SiC BJT needs effective driving scheme, but the present schemes are either complicated or not parameter optimized. In this paper we give an optimized parameter design method based on dual power supply RC driving circuit. First, the detailed switching process of SiC...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-11-01
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| Series: | Energy Reports |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352484722010587 |
| _version_ | 1828057967691300864 |
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| author | Haihong Qin Jiangjin Peng Sixuan Xie Yubin Mo Qiang Xiu Wenming Chen |
| author_facet | Haihong Qin Jiangjin Peng Sixuan Xie Yubin Mo Qiang Xiu Wenming Chen |
| author_sort | Haihong Qin |
| collection | DOAJ |
| description | As a current driven power device, SiC BJT needs effective driving scheme, but the present schemes are either complicated or not parameter optimized. In this paper we give an optimized parameter design method based on dual power supply RC driving circuit. First, the detailed switching process of SiC BJT considering the loop parasitic parameters is presented. Then, the influence of the accelerating capacitor on the switching loss and driving loss of SiC BJT is analyzed. The theoretical and simulation analysis shows that as the accelerating capacitor increases, the driving loss of SiC BJT increases proportionally, while the switching loss decreases less. Finally, the switching process of SiC BJT was investigated experimentally at various accelerating capacitor values from 3.3 nF to 94 nF. It was found that with the increase of the accelerating capacitor, the total loss during the switching process first decreases and then increases. The total loss minimization during the switching process of SiC BJT can be achieved through properly selecting the accelerating capacitor. |
| first_indexed | 2024-04-10T21:21:36Z |
| format | Article |
| id | doaj.art-48b559450bc440e4b2483f113b467b5a |
| institution | Directory Open Access Journal |
| issn | 2352-4847 |
| language | English |
| last_indexed | 2024-04-10T21:21:36Z |
| publishDate | 2022-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Energy Reports |
| spelling | doaj.art-48b559450bc440e4b2483f113b467b5a2023-01-20T04:25:23ZengElsevierEnergy Reports2352-48472022-11-018710720Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuitHaihong Qin0Jiangjin Peng1Sixuan Xie2Yubin Mo3Qiang Xiu4Wenming Chen5Corresponding author.; College of Automation Engineering Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaCollege of Automation Engineering Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaCollege of Automation Engineering Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaCollege of Automation Engineering Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaCollege of Automation Engineering Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaCollege of Automation Engineering Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaAs a current driven power device, SiC BJT needs effective driving scheme, but the present schemes are either complicated or not parameter optimized. In this paper we give an optimized parameter design method based on dual power supply RC driving circuit. First, the detailed switching process of SiC BJT considering the loop parasitic parameters is presented. Then, the influence of the accelerating capacitor on the switching loss and driving loss of SiC BJT is analyzed. The theoretical and simulation analysis shows that as the accelerating capacitor increases, the driving loss of SiC BJT increases proportionally, while the switching loss decreases less. Finally, the switching process of SiC BJT was investigated experimentally at various accelerating capacitor values from 3.3 nF to 94 nF. It was found that with the increase of the accelerating capacitor, the total loss during the switching process first decreases and then increases. The total loss minimization during the switching process of SiC BJT can be achieved through properly selecting the accelerating capacitor.http://www.sciencedirect.com/science/article/pii/S2352484722010587SiC BJTRC driving circuitParasitic parameterAccelerating capacitor |
| spellingShingle | Haihong Qin Jiangjin Peng Sixuan Xie Yubin Mo Qiang Xiu Wenming Chen Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuit Energy Reports SiC BJT RC driving circuit Parasitic parameter Accelerating capacitor |
| title | Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuit |
| title_full | Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuit |
| title_fullStr | Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuit |
| title_full_unstemmed | Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuit |
| title_short | Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuit |
| title_sort | switching characteristics analysis and power loss minimization of sic bjt based on dual power supply rc driving circuit |
| topic | SiC BJT RC driving circuit Parasitic parameter Accelerating capacitor |
| url | http://www.sciencedirect.com/science/article/pii/S2352484722010587 |
| work_keys_str_mv | AT haihongqin switchingcharacteristicsanalysisandpowerlossminimizationofsicbjtbasedondualpowersupplyrcdrivingcircuit AT jiangjinpeng switchingcharacteristicsanalysisandpowerlossminimizationofsicbjtbasedondualpowersupplyrcdrivingcircuit AT sixuanxie switchingcharacteristicsanalysisandpowerlossminimizationofsicbjtbasedondualpowersupplyrcdrivingcircuit AT yubinmo switchingcharacteristicsanalysisandpowerlossminimizationofsicbjtbasedondualpowersupplyrcdrivingcircuit AT qiangxiu switchingcharacteristicsanalysisandpowerlossminimizationofsicbjtbasedondualpowersupplyrcdrivingcircuit AT wenmingchen switchingcharacteristicsanalysisandpowerlossminimizationofsicbjtbasedondualpowersupplyrcdrivingcircuit |