Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuit

Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuit

As a current driven power device, SiC BJT needs effective driving scheme, but the present schemes are either complicated or not parameter optimized. In this paper we give an optimized parameter design method based on dual power supply RC driving circuit. First, the detailed switching process of SiC...

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Bibliographic Details
Main Authors: Haihong Qin, Jiangjin Peng, Sixuan Xie, Yubin Mo, Qiang Xiu, Wenming Chen
Format: Article
Language:English
Published: Elsevier 2022-11-01
Series:Energy Reports
Subjects:
SiC BJT
RC driving circuit
Parasitic parameter
Accelerating capacitor
Online Access:http://www.sciencedirect.com/science/article/pii/S2352484722010587

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