Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor
Excitons dominate the photonic and optoelectronic properties of a material. Although significant advancements exist in understanding various types of excitons, progress on excitons that are indirect in both real- and momentum-spaces is still limited. Here, we demonstrate the real- and momentum-indir...
| Main Authors: | , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Science Press
2023-06-01
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| Series: | National Science Open |
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| Online Access: | https://www.sciengine.com/doi/10.1360/nso/20220060 |
| _version_ | 1826550653319643136 |
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| author | Huang Zhiheng Li Yuhui Bo Tao Zhao Yanchong Wu Fanfan Li Lu Yuan Yalong Ji Yiru Liu Le Tian Jinpeng Chu Yanbang Zan Xiaozhou Peng Yalin Li Xiuzhen Zhang Yangkun Watanabe Kenji Taniguchi Takashi Sun Zhipei Yang Wei Shi Dongxia Du Shixuan Du Luojun Zhang Guangyu |
| author_facet | Huang Zhiheng Li Yuhui Bo Tao Zhao Yanchong Wu Fanfan Li Lu Yuan Yalong Ji Yiru Liu Le Tian Jinpeng Chu Yanbang Zan Xiaozhou Peng Yalin Li Xiuzhen Zhang Yangkun Watanabe Kenji Taniguchi Takashi Sun Zhipei Yang Wei Shi Dongxia Du Shixuan Du Luojun Zhang Guangyu |
| author_sort | Huang Zhiheng |
| collection | DOAJ |
| description | Excitons dominate the photonic and optoelectronic properties of a material. Although significant advancements exist in understanding various types of excitons, progress on excitons that are indirect in both real- and momentum-spaces is still limited. Here, we demonstrate the real- and momentum-indirect neutral and charged excitons (including their phonon replicas) in a multi-valley semiconductor of bilayer MoS<sub>2</sub>, by performing electric-field/doping-density dependent photoluminescence. Together with first-principles calculations, we uncover that the observed real- and momentum-indirect exciton involves electron/hole from K/Γ valley, solving the longstanding controversy of its momentum origin. Remarkably, the binding energy of real- and momentum-indirect charged exciton is extremely large (i.e., ~59 meV), more than twice that of real- and momentum-direct charged exciton (i.e., ~24 meV). The giant binding energy, along with the electrical tunability and long lifetime, endows real- and momentum-indirect excitons an emerging platform to study many-body physics and to illuminate developments in photonics and optoelectronics. |
| first_indexed | 2024-03-12T23:16:16Z |
| format | Article |
| id | doaj.art-48d7556b978b4c72b15b320baf0dd3ee |
| institution | Directory Open Access Journal |
| issn | 2097-1168 |
| language | English |
| last_indexed | 2025-03-14T06:40:45Z |
| publishDate | 2023-06-01 |
| publisher | Science Press |
| record_format | Article |
| series | National Science Open |
| spelling | doaj.art-48d7556b978b4c72b15b320baf0dd3ee2025-03-05T01:41:48ZengScience PressNational Science Open2097-11682023-06-01210.1360/nso/20220060eb33e642Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductorHuang Zhiheng0Li Yuhui1Bo Tao2Zhao Yanchong3Wu Fanfan4Li Lu5Yuan Yalong6Ji Yiru7Liu Le8Tian Jinpeng9Chu Yanbang10Zan Xiaozhou11Peng Yalin12Li Xiuzhen13Zhang Yangkun14Watanabe Kenji15Taniguchi Takashi16Sun Zhipei17Yang Wei18Shi Dongxia19Du Shixuan20Du Luojun21Zhang Guangyu22["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China"]["Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan"]["International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan"]["Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo FI-02150, Finland","Quantum Technology Finland (QTF) Centre of Excellence, Department of Applied Physics, Aalto University, Aalto FI-00076, Finland"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China","Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China","Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China","Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China","Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China"]["Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China","Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China","Songshan Lake Materials Laboratory, Dongguan 523808, China"]Excitons dominate the photonic and optoelectronic properties of a material. Although significant advancements exist in understanding various types of excitons, progress on excitons that are indirect in both real- and momentum-spaces is still limited. Here, we demonstrate the real- and momentum-indirect neutral and charged excitons (including their phonon replicas) in a multi-valley semiconductor of bilayer MoS<sub>2</sub>, by performing electric-field/doping-density dependent photoluminescence. Together with first-principles calculations, we uncover that the observed real- and momentum-indirect exciton involves electron/hole from K/Γ valley, solving the longstanding controversy of its momentum origin. Remarkably, the binding energy of real- and momentum-indirect charged exciton is extremely large (i.e., ~59 meV), more than twice that of real- and momentum-direct charged exciton (i.e., ~24 meV). The giant binding energy, along with the electrical tunability and long lifetime, endows real- and momentum-indirect excitons an emerging platform to study many-body physics and to illuminate developments in photonics and optoelectronics.https://www.sciengine.com/doi/10.1360/nso/20220060excitonsreal- and momentum-indirect excitongiant binding energyelectrical tunabilitymulti-valley semiconductor |
| spellingShingle | Huang Zhiheng Li Yuhui Bo Tao Zhao Yanchong Wu Fanfan Li Lu Yuan Yalong Ji Yiru Liu Le Tian Jinpeng Chu Yanbang Zan Xiaozhou Peng Yalin Li Xiuzhen Zhang Yangkun Watanabe Kenji Taniguchi Takashi Sun Zhipei Yang Wei Shi Dongxia Du Shixuan Du Luojun Zhang Guangyu Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor National Science Open excitons real- and momentum-indirect exciton giant binding energy electrical tunability multi-valley semiconductor |
| title | Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor |
| title_full | Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor |
| title_fullStr | Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor |
| title_full_unstemmed | Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor |
| title_short | Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor |
| title_sort | real and momentum indirect neutral and charged excitons in a multi valley semiconductor |
| topic | excitons real- and momentum-indirect exciton giant binding energy electrical tunability multi-valley semiconductor |
| url | https://www.sciengine.com/doi/10.1360/nso/20220060 |
| work_keys_str_mv | AT huangzhiheng realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT liyuhui realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT botao realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT zhaoyanchong realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT wufanfan realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT lilu realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT yuanyalong realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT jiyiru realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT liule realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT tianjinpeng realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT chuyanbang realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT zanxiaozhou realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT pengyalin realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT lixiuzhen realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT zhangyangkun realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT watanabekenji realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT taniguchitakashi realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT sunzhipei realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT yangwei realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT shidongxia realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT dushixuan realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT duluojun realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor AT zhangguangyu realandmomentumindirectneutralandchargedexcitonsinamultivalleysemiconductor |