Investigation of 1200 V SiC MOSFETs’ Surge Reliability
In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experim...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-07-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/10/7/485 |
| _version_ | 1811230179627892736 |
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| author | Huan Li Jue Wang Na Ren Hongyi Xu Kuang Sheng |
| author_facet | Huan Li Jue Wang Na Ren Hongyi Xu Kuang Sheng |
| author_sort | Huan Li |
| collection | DOAJ |
| description | In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experimental results show that the maximum surge currents that the devices can withstand are similar for both cases. It is found that short circuits occurred between the gate and the source in the failed devices. The characteristics of the body diode have also changed after the tests. By measuring the device characteristics after each surge current is applied, it can be concluded that the damages to the gate oxide layer and the body diode occurred only when the maximum surge current is applied. By decapping the failed devices and observing the cross section of the damaged cell, it is found that high temperature caused by excessive current flow through the devices during the surge tests is the main reason for the device failure. Finally, the TCAD simulation of the devices has been carried out to bring insight into the operation of the devices during the surge events. |
| first_indexed | 2024-04-12T10:25:56Z |
| format | Article |
| id | doaj.art-48e091c37f2040dd9c0a5e4317f5fce6 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-04-12T10:25:56Z |
| publishDate | 2019-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-48e091c37f2040dd9c0a5e4317f5fce62022-12-22T03:36:58ZengMDPI AGMicromachines2072-666X2019-07-0110748510.3390/mi10070485mi10070485Investigation of 1200 V SiC MOSFETs’ Surge ReliabilityHuan Li0Jue Wang1Na Ren2Hongyi Xu3Kuang Sheng4School of Information & Electrical Engineering, Zhejiang University City College, Hangzhou 310015, ChinaSchool of Information & Electrical Engineering, Zhejiang University City College, Hangzhou 310015, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaIn this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experimental results show that the maximum surge currents that the devices can withstand are similar for both cases. It is found that short circuits occurred between the gate and the source in the failed devices. The characteristics of the body diode have also changed after the tests. By measuring the device characteristics after each surge current is applied, it can be concluded that the damages to the gate oxide layer and the body diode occurred only when the maximum surge current is applied. By decapping the failed devices and observing the cross section of the damaged cell, it is found that high temperature caused by excessive current flow through the devices during the surge tests is the main reason for the device failure. Finally, the TCAD simulation of the devices has been carried out to bring insight into the operation of the devices during the surge events.https://www.mdpi.com/2072-666X/10/7/4851200 V SiC MOSFETbody diodesurge reliabilitysilvaco simulation |
| spellingShingle | Huan Li Jue Wang Na Ren Hongyi Xu Kuang Sheng Investigation of 1200 V SiC MOSFETs’ Surge Reliability Micromachines 1200 V SiC MOSFET body diode surge reliability silvaco simulation |
| title | Investigation of 1200 V SiC MOSFETs’ Surge Reliability |
| title_full | Investigation of 1200 V SiC MOSFETs’ Surge Reliability |
| title_fullStr | Investigation of 1200 V SiC MOSFETs’ Surge Reliability |
| title_full_unstemmed | Investigation of 1200 V SiC MOSFETs’ Surge Reliability |
| title_short | Investigation of 1200 V SiC MOSFETs’ Surge Reliability |
| title_sort | investigation of 1200 v sic mosfets surge reliability |
| topic | 1200 V SiC MOSFET body diode surge reliability silvaco simulation |
| url | https://www.mdpi.com/2072-666X/10/7/485 |
| work_keys_str_mv | AT huanli investigationof1200vsicmosfetssurgereliability AT juewang investigationof1200vsicmosfetssurgereliability AT naren investigationof1200vsicmosfetssurgereliability AT hongyixu investigationof1200vsicmosfetssurgereliability AT kuangsheng investigationof1200vsicmosfetssurgereliability |