Investigation of 1200 V SiC MOSFETs’ Surge Reliability
In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experim...
| Hlavní autoři: | , , , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
MDPI AG
2019-07-01
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| Edice: | Micromachines |
| Témata: | |
| On-line přístup: | https://www.mdpi.com/2072-666X/10/7/485 |