Investigation of 1200 V SiC MOSFETs’ Surge Reliability

Investigation of 1200 V SiC MOSFETs’ Surge Reliability

In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experim...

书目详细资料
Main Authors:	Huan Li, Jue Wang, Na Ren, Hongyi Xu, Kuang Sheng
格式:	文件
语言:	English
出版:	MDPI AG 2019-07-01
丛编:	Micromachines
主题:	1200 V SiC MOSFET body diode surge reliability silvaco simulation
在线阅读:	https://www.mdpi.com/2072-666X/10/7/485

相似书籍

Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys
由: Jędrzej Stęszewski, et al.
出版: (2023-06-01)

SiC MOSFETs capacitance study
由: Ilaria Matacena, et al.
出版: (2023-09-01)

An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures
由: Jiashu Qian, et al.
出版: (2024-01-01)

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kV SiC MOSFETs Across Multiple Vendors and Generations
由: Shahid Makhdoom, et al.
出版: (2024-01-01)

Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress
由: Shahid Makhdoom, et al.
出版: (2025-01-01)

The Road to a Robust and Affordable SiC Power MOSFET Technology
由: Hema Lata Rao Maddi, et al.
出版: (2021-12-01)

Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load
由: Sebastian Bąba
出版: (2021-05-01)

Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET
由: Alireza Sheikhan, et al.
出版: (2024-10-01)

Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions
由: Giuseppe Pennisi, et al.
出版: (2024-05-01)

A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
由: Jongwoon Yoon, et al.
出版: (2021-12-01)

Development of 3C-SiC MOSFETs
由: Mietek Bakowski, et al.
出版: (2023-06-01)

Electrically Active Defects in SiC Power MOSFETs
由: Mayank Chaturvedi, et al.
出版: (2023-02-01)

Effect of the Conduction Resistance of SiC MOSFET on the Harmonics of Inverter Voltage in Wireless Power-Transfer Systems for Electric Vehicles
由: Tatsuya Yanagi, et al.
出版: (2024-01-01)

Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs
由: Suvendu Nayak, et al.
出版: (2021-01-01)

SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network
由: Xiping Niu, et al.
出版: (2024-12-01)

A Simple Method to Validate Power Loss in Medium Voltage SiC MOSFETs and Schottky Diodes Operating in a Three-Phase Inverter
由: Jacek Rąbkowski, et al.
出版: (2020-09-01)

Remaining Useful Lifetime Prediction Based on Extended Kalman Particle Filter for Power SiC MOSFETs
由: Wei Wu, et al.
出版: (2023-04-01)

SiC-MOSFET three phase unbalance compensation device with interleaved parallel structure
由: Xiao Guo, et al.
出版: (2022-11-01)

A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
由: Ping Li, et al.
出版: (2023-06-01)

4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance
由: Junghun Kim, et al.
出版: (2020-09-01)

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module
由: Yue Chen, et al.
出版: (2021-01-01)

An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration
由: Dakang Yuan, et al.
出版: (2021-01-01)

SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance
由: Xintian Zhou, et al.
出版: (2020-01-01)

A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics
由: Hao Wu, et al.
出版: (2023-12-01)

Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses
由: Huifen Dong, et al.
出版: (2023-07-01)

Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET
由: Shangzhou Zhang, et al.
出版: (2023-01-01)

Design of a Gate-Driving Cell for Enabling Extended SiC MOSFET Voltage Blocking
由: Walid Issa, et al.
出版: (2022-10-01)

Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation
由: Hongwei Chen, et al.
出版: (2023-01-01)

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile
由: Hao Huang, et al.
出版: (2021-01-01)

A Novel 4H-SiC Asymmetric MOSFET with Step Trench
由: Zhong Lan, et al.
出版: (2024-05-01)

A fast forecasting model of electrothermal distribution for parallelled SiC MOSFETs
由: Haihong Qin, et al.
出版: (2022-11-01)

Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3<sup>rd</sup> Quadrant Operation
由: Dongyoung Kim, et al.
出版: (2022-01-01)

Evaluation of antiparallel SiC Schottky diode in SiC MOSFET phase-leg configuration of synchronous rectifier
由: Haihong Qin, et al.
出版: (2023-11-01)

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique
由: Baozhu Wang, et al.
出版: (2023-12-01)

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed
由: Yangjie Ou, et al.
出版: (2024-02-01)

Advanced voltage balancing techniques for series-connected SiC-MOSFET devices: A comprehensive survey
由: Luciano F.S. Alves, et al.
出版: (2024-04-01)

Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter
由: Han Cao, et al.
出版: (2024-01-01)

Design of a Solid State Circuit Breaker Using a SiC MOSFET for LVDC Applications
由: Byong Jo Hyon, et al.
出版: (2024-01-01)

Practical guidelines for device characterization and power converter design involving SiC MOSFETs
由: Yeo, Howe Li, et al.
出版: (2020)

Comprehensive trade-off strategy for SiC MOSFETs using buried-MOS configuration
由: Junhong Feng, et al.
出版: (2025-03-01)