A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms
The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and co...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-03-01
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| Series: | Energies |
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| Online Access: | http://www.mdpi.com/1996-1073/12/5/851 |
| _version_ | 1811302245667438592 |
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| author | Qingyi Kong Mingxing Du Ziwei Ouyang Kexin Wei William Gerard Hurley |
| author_facet | Qingyi Kong Mingxing Du Ziwei Ouyang Kexin Wei William Gerard Hurley |
| author_sort | Qingyi Kong |
| collection | DOAJ |
| description | The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method. |
| first_indexed | 2024-04-13T07:24:34Z |
| format | Article |
| id | doaj.art-48e1d06976e94f3698b8490c0a95b5e5 |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-04-13T07:24:34Z |
| publishDate | 2019-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-48e1d06976e94f3698b8490c0a95b5e52022-12-22T02:56:31ZengMDPI AGEnergies1996-10732019-03-0112585110.3390/en12050851en12050851A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction MechanismsQingyi Kong0Mingxing Du1Ziwei Ouyang2Kexin Wei3William Gerard Hurley4Tianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, ChinaTianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, ChinaTianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, ChinaTianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, ChinaTianjin Key Laboratory of Control Theory and Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, ChinaThe on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.http://www.mdpi.com/1996-1073/12/5/851IGBT moduleon-state voltageseparation methodmodel |
| spellingShingle | Qingyi Kong Mingxing Du Ziwei Ouyang Kexin Wei William Gerard Hurley A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms Energies IGBT module on-state voltage separation method model |
| title | A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms |
| title_full | A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms |
| title_fullStr | A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms |
| title_full_unstemmed | A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms |
| title_short | A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms |
| title_sort | model of the on state voltage across igbt modules based on physical structure and conduction mechanisms |
| topic | IGBT module on-state voltage separation method model |
| url | http://www.mdpi.com/1996-1073/12/5/851 |
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