Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field
Controlling the spin Hall angle is significant to tunable and energy-efficient spintronic devices. Here, the authors demonstrate that the spin Hall angle in Bi2Se3 can be tuned and even enhanced about 600% reversibly by the electric field.
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-03-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-022-29281-w |
| _version_ | 1818354587122270208 |
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| author | Qi Lu Ping Li Zhixin Guo Guohua Dong Bin Peng Xi Zha Tai Min Ziyao Zhou Ming Liu |
| author_facet | Qi Lu Ping Li Zhixin Guo Guohua Dong Bin Peng Xi Zha Tai Min Ziyao Zhou Ming Liu |
| author_sort | Qi Lu |
| collection | DOAJ |
| description | Controlling the spin Hall angle is significant to tunable and energy-efficient spintronic devices. Here, the authors demonstrate that the spin Hall angle in Bi2Se3 can be tuned and even enhanced about 600% reversibly by the electric field. |
| first_indexed | 2024-12-13T19:27:47Z |
| format | Article |
| id | doaj.art-48ff856ad2d548fda7eb6000ce9ddb05 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-12-13T19:27:47Z |
| publishDate | 2022-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-48ff856ad2d548fda7eb6000ce9ddb052022-12-21T23:34:00ZengNature PortfolioNature Communications2041-17232022-03-011311810.1038/s41467-022-29281-wGiant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric fieldQi Lu0Ping Li1Zhixin Guo2Guohua Dong3Bin Peng4Xi Zha5Tai Min6Ziyao Zhou7Ming Liu8Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Manufacturing System Engineering, Xi’an Jiaotong UniversityCenter for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong UniversityCenter for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Manufacturing System Engineering, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Manufacturing System Engineering, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Manufacturing System Engineering, Xi’an Jiaotong UniversityCenter for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Manufacturing System Engineering, Xi’an Jiaotong UniversityElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Manufacturing System Engineering, Xi’an Jiaotong UniversityControlling the spin Hall angle is significant to tunable and energy-efficient spintronic devices. Here, the authors demonstrate that the spin Hall angle in Bi2Se3 can be tuned and even enhanced about 600% reversibly by the electric field.https://doi.org/10.1038/s41467-022-29281-w |
| spellingShingle | Qi Lu Ping Li Zhixin Guo Guohua Dong Bin Peng Xi Zha Tai Min Ziyao Zhou Ming Liu Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field Nature Communications |
| title | Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field |
| title_full | Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field |
| title_fullStr | Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field |
| title_full_unstemmed | Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field |
| title_short | Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field |
| title_sort | giant tunable spin hall angle in sputtered bi2se3 controlled by an electric field |
| url | https://doi.org/10.1038/s41467-022-29281-w |
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