Influences of intergrowth structure construction on the structural and electrical properties of the BBT-BiT ceramics

Bismuth Layer Structured Ferroelectrics (BLSFs) have always been an important research direction of high Curie temperature piezoelectrical ceramics, and the construction of intergrowth structure has been considered as an effective method to improve the electric properties of BLSFs. There are many li...

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Main Authors: Yuying Wang, Deyi Zheng, Runyu Mao, Xu Wang
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-12-01
Series:Frontiers in Chemistry
Subjects:
Online Access:https://www.frontiersin.org/articles/10.3389/fchem.2022.1089739/full
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author Yuying Wang
Deyi Zheng
Runyu Mao
Xu Wang
author_facet Yuying Wang
Deyi Zheng
Runyu Mao
Xu Wang
author_sort Yuying Wang
collection DOAJ
description Bismuth Layer Structured Ferroelectrics (BLSFs) have always been an important research direction of high Curie temperature piezoelectrical ceramics, and the construction of intergrowth structure has been considered as an effective method to improve the electric properties of BLSFs. There are many literatures about intergrowth structure improving electrical performance, but few reports analyze the influence of the construction of intergrowth structure on the internal defects and electrical properties in BLSFs. In this study, (1-x) BaBi4Ti4O15 - x Bi4Ti3O12 ceramic samples with intergrowth bismuth layer structure were fabricated by a conventional solid-state reaction method, and the mechanism of the influence of intergrowth structure construction on the structure and electrical properties of BLSFs has been discussed. The crystal structure, phase composition, microstructure, dielectric and piezoelectric performance, relaxation behavior and AC conductivity of ceramic samples were systematically investigated. It has been found that the construction of intergrowth structure can significantly inhibit the generation of oxygen vacancies. The concentration of the oxygen vacancies plays an important role, and its reduction will lead to the inhibition of grain growth and the increase of the relaxation activation energy of ceramics. In addition, the intergrowth structure construction also affects the symmetry of ceramics in the c-axis direction, thus affecting the electrical properties of ceramics.
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spelling doaj.art-4937b0d08b7747b7b876047aaca92d7f2022-12-22T03:53:35ZengFrontiers Media S.A.Frontiers in Chemistry2296-26462022-12-011010.3389/fchem.2022.10897391089739Influences of intergrowth structure construction on the structural and electrical properties of the BBT-BiT ceramicsYuying WangDeyi ZhengRunyu MaoXu WangBismuth Layer Structured Ferroelectrics (BLSFs) have always been an important research direction of high Curie temperature piezoelectrical ceramics, and the construction of intergrowth structure has been considered as an effective method to improve the electric properties of BLSFs. There are many literatures about intergrowth structure improving electrical performance, but few reports analyze the influence of the construction of intergrowth structure on the internal defects and electrical properties in BLSFs. In this study, (1-x) BaBi4Ti4O15 - x Bi4Ti3O12 ceramic samples with intergrowth bismuth layer structure were fabricated by a conventional solid-state reaction method, and the mechanism of the influence of intergrowth structure construction on the structure and electrical properties of BLSFs has been discussed. The crystal structure, phase composition, microstructure, dielectric and piezoelectric performance, relaxation behavior and AC conductivity of ceramic samples were systematically investigated. It has been found that the construction of intergrowth structure can significantly inhibit the generation of oxygen vacancies. The concentration of the oxygen vacancies plays an important role, and its reduction will lead to the inhibition of grain growth and the increase of the relaxation activation energy of ceramics. In addition, the intergrowth structure construction also affects the symmetry of ceramics in the c-axis direction, thus affecting the electrical properties of ceramics.https://www.frontiersin.org/articles/10.3389/fchem.2022.1089739/fullcurie temperatureBBT-BiTintergrowth structureoxygen vacancyelectric properties
spellingShingle Yuying Wang
Deyi Zheng
Runyu Mao
Xu Wang
Influences of intergrowth structure construction on the structural and electrical properties of the BBT-BiT ceramics
Frontiers in Chemistry
curie temperature
BBT-BiT
intergrowth structure
oxygen vacancy
electric properties
title Influences of intergrowth structure construction on the structural and electrical properties of the BBT-BiT ceramics
title_full Influences of intergrowth structure construction on the structural and electrical properties of the BBT-BiT ceramics
title_fullStr Influences of intergrowth structure construction on the structural and electrical properties of the BBT-BiT ceramics
title_full_unstemmed Influences of intergrowth structure construction on the structural and electrical properties of the BBT-BiT ceramics
title_short Influences of intergrowth structure construction on the structural and electrical properties of the BBT-BiT ceramics
title_sort influences of intergrowth structure construction on the structural and electrical properties of the bbt bit ceramics
topic curie temperature
BBT-BiT
intergrowth structure
oxygen vacancy
electric properties
url https://www.frontiersin.org/articles/10.3389/fchem.2022.1089739/full
work_keys_str_mv AT yuyingwang influencesofintergrowthstructureconstructiononthestructuralandelectricalpropertiesofthebbtbitceramics
AT deyizheng influencesofintergrowthstructureconstructiononthestructuralandelectricalpropertiesofthebbtbitceramics
AT runyumao influencesofintergrowthstructureconstructiononthestructuralandelectricalpropertiesofthebbtbitceramics
AT xuwang influencesofintergrowthstructureconstructiononthestructuralandelectricalpropertiesofthebbtbitceramics