Experimental Analysis of Communitation Process of Power Semiconductor Transistor’s Structures

The paper deals with testing device designed for experimental examination of processes in power electronics devices during various switching modes is described. Through the use of auxiliary circuits additional switching modes (ZVS, ZCS) are realized except hard switching, and turning-off with reduce...

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Main Authors: Pavol Spanik, Branislav Dobrucky, Michal Frivaldsky, Peter Drgona, Ivan Lokseninec
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2007-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/219
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author Pavol Spanik
Branislav Dobrucky
Michal Frivaldsky
Peter Drgona
Ivan Lokseninec
author_facet Pavol Spanik
Branislav Dobrucky
Michal Frivaldsky
Peter Drgona
Ivan Lokseninec
author_sort Pavol Spanik
collection DOAJ
description The paper deals with testing device designed for experimental examination of processes in power electronics devices during various switching modes is described. Through the use of auxiliary circuits additional switching modes (ZVS, ZCS) are realized except hard switching, and turning-off with reduced current respectively. The device´s advantage is possibility of fine dead time setting, allowing us analyzing the effects of phenomenon noted above, on measurements of commutation losses.
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1804-3119
language English
last_indexed 2024-04-09T12:44:07Z
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publisher VSB-Technical University of Ostrava
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spelling doaj.art-499362a3ecdb46fc87c4e797163dfbff2023-05-14T20:50:04ZengVSB-Technical University of OstravaAdvances in Electrical and Electronic Engineering1336-13761804-31192007-01-01615053154Experimental Analysis of Communitation Process of Power Semiconductor Transistor’s StructuresPavol Spanik0Branislav DobruckyMichal FrivaldskyPeter DrgonaIvan LokseninecUniversity of ZilinaThe paper deals with testing device designed for experimental examination of processes in power electronics devices during various switching modes is described. Through the use of auxiliary circuits additional switching modes (ZVS, ZCS) are realized except hard switching, and turning-off with reduced current respectively. The device´s advantage is possibility of fine dead time setting, allowing us analyzing the effects of phenomenon noted above, on measurements of commutation losses.http://advances.utc.sk/index.php/AEEE/article/view/219power electronics deviceswitching modeauxiliary circuitdead time.
spellingShingle Pavol Spanik
Branislav Dobrucky
Michal Frivaldsky
Peter Drgona
Ivan Lokseninec
Experimental Analysis of Communitation Process of Power Semiconductor Transistor’s Structures
Advances in Electrical and Electronic Engineering
power electronics device
switching mode
auxiliary circuit
dead time.
title Experimental Analysis of Communitation Process of Power Semiconductor Transistor’s Structures
title_full Experimental Analysis of Communitation Process of Power Semiconductor Transistor’s Structures
title_fullStr Experimental Analysis of Communitation Process of Power Semiconductor Transistor’s Structures
title_full_unstemmed Experimental Analysis of Communitation Process of Power Semiconductor Transistor’s Structures
title_short Experimental Analysis of Communitation Process of Power Semiconductor Transistor’s Structures
title_sort experimental analysis of communitation process of power semiconductor transistor s structures
topic power electronics device
switching mode
auxiliary circuit
dead time.
url http://advances.utc.sk/index.php/AEEE/article/view/219
work_keys_str_mv AT pavolspanik experimentalanalysisofcommunitationprocessofpowersemiconductortransistorsstructures
AT branislavdobrucky experimentalanalysisofcommunitationprocessofpowersemiconductortransistorsstructures
AT michalfrivaldsky experimentalanalysisofcommunitationprocessofpowersemiconductortransistorsstructures
AT peterdrgona experimentalanalysisofcommunitationprocessofpowersemiconductortransistorsstructures
AT ivanlokseninec experimentalanalysisofcommunitationprocessofpowersemiconductortransistorsstructures