Canonical Hyperchaotic Oscillators With Single Generalized Transistor and Generative Two-Terminal Elements
This paper describes systematic design process toward third-order autonomous deterministic hyperchaotic oscillators with two coupled generative two-terminal elements. These active devices represent alternative to conventional dissipative accumulation elements such as non-ideal capacitors and inducto...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9868022/ |
| _version_ | 1811268775483277312 |
|---|---|
| author | Jiri Petrzela |
| author_facet | Jiri Petrzela |
| author_sort | Jiri Petrzela |
| collection | DOAJ |
| description | This paper describes systematic design process toward third-order autonomous deterministic hyperchaotic oscillators with two coupled generative two-terminal elements. These active devices represent alternative to conventional dissipative accumulation elements such as non-ideal capacitors and inductors. Analyzed network structures contain generalized bipolar transistor as only active element. Three different networks are studied, depending on common-electrode configurations. In each case, transistor is modelled as two-port using admittance parameters with the non-zero linear backward and polynomial forward trans-conductance. As proved in paper, scalar nonlinearity caused by the amplification property of transistor can push circuit into chaotic and, more interestingly, hyperchaotic steady states. Existence of parameter spaces leading to robust chaotic and hyperchaotic solution is documented by using concept of one-dimensional Lyapunov exponents and colored high-resolution surface-contour plots of two largest numbers. Geometrical structural stability of generated strange attractors is proved via construction of the flow-equivalent chaotic oscillator and real measurement. Plane projections of carefully selected strange attractors were captured by oscilloscope and visualized. |
| first_indexed | 2024-04-12T21:29:00Z |
| format | Article |
| id | doaj.art-499790d3a8414fb18893c4db023e8bd8 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-04-12T21:29:00Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-499790d3a8414fb18893c4db023e8bd82022-12-22T03:16:05ZengIEEEIEEE Access2169-35362022-01-0110904569046610.1109/ACCESS.2022.32018709868022Canonical Hyperchaotic Oscillators With Single Generalized Transistor and Generative Two-Terminal ElementsJiri Petrzela0https://orcid.org/0000-0001-5286-9574Department of Radio Electronics, Brno University of Technology, 00 Brno, Czech RepublicThis paper describes systematic design process toward third-order autonomous deterministic hyperchaotic oscillators with two coupled generative two-terminal elements. These active devices represent alternative to conventional dissipative accumulation elements such as non-ideal capacitors and inductors. Analyzed network structures contain generalized bipolar transistor as only active element. Three different networks are studied, depending on common-electrode configurations. In each case, transistor is modelled as two-port using admittance parameters with the non-zero linear backward and polynomial forward trans-conductance. As proved in paper, scalar nonlinearity caused by the amplification property of transistor can push circuit into chaotic and, more interestingly, hyperchaotic steady states. Existence of parameter spaces leading to robust chaotic and hyperchaotic solution is documented by using concept of one-dimensional Lyapunov exponents and colored high-resolution surface-contour plots of two largest numbers. Geometrical structural stability of generated strange attractors is proved via construction of the flow-equivalent chaotic oscillator and real measurement. Plane projections of carefully selected strange attractors were captured by oscilloscope and visualized.https://ieeexplore.ieee.org/document/9868022/Admittance parametersbipolar transistorfrequency dependent negative resistorchaoschaotic oscillatorhyperchaos |
| spellingShingle | Jiri Petrzela Canonical Hyperchaotic Oscillators With Single Generalized Transistor and Generative Two-Terminal Elements IEEE Access Admittance parameters bipolar transistor frequency dependent negative resistor chaos chaotic oscillator hyperchaos |
| title | Canonical Hyperchaotic Oscillators With Single Generalized Transistor and Generative Two-Terminal Elements |
| title_full | Canonical Hyperchaotic Oscillators With Single Generalized Transistor and Generative Two-Terminal Elements |
| title_fullStr | Canonical Hyperchaotic Oscillators With Single Generalized Transistor and Generative Two-Terminal Elements |
| title_full_unstemmed | Canonical Hyperchaotic Oscillators With Single Generalized Transistor and Generative Two-Terminal Elements |
| title_short | Canonical Hyperchaotic Oscillators With Single Generalized Transistor and Generative Two-Terminal Elements |
| title_sort | canonical hyperchaotic oscillators with single generalized transistor and generative two terminal elements |
| topic | Admittance parameters bipolar transistor frequency dependent negative resistor chaos chaotic oscillator hyperchaos |
| url | https://ieeexplore.ieee.org/document/9868022/ |
| work_keys_str_mv | AT jiripetrzela canonicalhyperchaoticoscillatorswithsinglegeneralizedtransistorandgenerativetwoterminalelements |