Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate
GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n<sup>−</sup>-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect c...
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MDPI AG
2021-01-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/8/2/28 |
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| author | Fangzhou Liang Wen Chen Meixin Feng Yingnan Huang Jianxun Liu Xiujian Sun Xiaoning Zhan Qian Sun Qibao Wu Hui Yang |
| author_facet | Fangzhou Liang Wen Chen Meixin Feng Yingnan Huang Jianxun Liu Xiujian Sun Xiaoning Zhan Qian Sun Qibao Wu Hui Yang |
| author_sort | Fangzhou Liang |
| collection | DOAJ |
| description | GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n<sup>−</sup>-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect concentration. More importantly, the effect of Si doping on the performance of the GaN-on-Si Schottky barrier ultraviolet photodetector was studied. It was found that light Si doping in the absorption layer can significantly increase the responsivity under reverse bias, which might be attributed to the persistent photoconductivity that originates from the lowering of the Schottky barrier height. In addition, the devices with unintentionally doped GaN demonstrated a relatively high-speed photo response. We briefly studied the mechanism of changes in Schottky barrier, dark current and the characteristic of response time. |
| first_indexed | 2024-03-09T03:54:17Z |
| format | Article |
| id | doaj.art-499aea7beaa74872b28d577d636e3326 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-09T03:54:17Z |
| publishDate | 2021-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-499aea7beaa74872b28d577d636e33262023-12-03T14:22:36ZengMDPI AGPhotonics2304-67322021-01-01822810.3390/photonics8020028Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si SubstrateFangzhou Liang0Wen Chen1Meixin Feng2Yingnan Huang3Jianxun Liu4Xiujian Sun5Xiaoning Zhan6Qian Sun7Qibao Wu8Hui Yang9Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaKey Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaKey Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaKey Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaKey Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaKey Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaKey Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaKey Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaSchool of Intelligent Manufacturing and Equipment, Shenzhen Institute of Information Technology, Shenzhen 518172, ChinaKey Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaGaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n<sup>−</sup>-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect concentration. More importantly, the effect of Si doping on the performance of the GaN-on-Si Schottky barrier ultraviolet photodetector was studied. It was found that light Si doping in the absorption layer can significantly increase the responsivity under reverse bias, which might be attributed to the persistent photoconductivity that originates from the lowering of the Schottky barrier height. In addition, the devices with unintentionally doped GaN demonstrated a relatively high-speed photo response. We briefly studied the mechanism of changes in Schottky barrier, dark current and the characteristic of response time.https://www.mdpi.com/2304-6732/8/2/28GaN on Siultraviolet photodetectorSi dopingresponsivitypersistent photoconductivity |
| spellingShingle | Fangzhou Liang Wen Chen Meixin Feng Yingnan Huang Jianxun Liu Xiujian Sun Xiaoning Zhan Qian Sun Qibao Wu Hui Yang Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate Photonics GaN on Si ultraviolet photodetector Si doping responsivity persistent photoconductivity |
| title | Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate |
| title_full | Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate |
| title_fullStr | Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate |
| title_full_unstemmed | Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate |
| title_short | Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate |
| title_sort | effect of si doping on the performance of gan schottky barrier ultraviolet photodetector grown on si substrate |
| topic | GaN on Si ultraviolet photodetector Si doping responsivity persistent photoconductivity |
| url | https://www.mdpi.com/2304-6732/8/2/28 |
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