Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal c...
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| Format: | Article |
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MDPI AG
2021-10-01
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| Series: | Membranes |
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| Online Access: | https://www.mdpi.com/2077-0375/11/11/848 |
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| author | Chong-Rong Huang Hsien-Chin Chiu Chia-Hao Liu Hsiang-Chun Wang Hsuan-Ling Kao Chih-Tien Chen Kuo-Jen Chang |
| author_facet | Chong-Rong Huang Hsien-Chin Chiu Chia-Hao Liu Hsiang-Chun Wang Hsuan-Ling Kao Chih-Tien Chen Kuo-Jen Chang |
| author_sort | Chong-Rong Huang |
| collection | DOAJ |
| description | In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (<i>I</i><sub>DS</sub>) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower <i>I</i><sub>DS</sub> degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability. |
| first_indexed | 2024-03-10T05:17:40Z |
| format | Article |
| id | doaj.art-49ca62e52e804ee3b70050b53afafe78 |
| institution | Directory Open Access Journal |
| issn | 2077-0375 |
| language | English |
| last_indexed | 2024-03-10T05:17:40Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Membranes |
| spelling | doaj.art-49ca62e52e804ee3b70050b53afafe782023-11-23T00:19:30ZengMDPI AGMembranes2077-03752021-10-01111184810.3390/membranes11110848Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN SubstratesChong-Rong Huang0Hsien-Chin Chiu1Chia-Hao Liu2Hsiang-Chun Wang3Hsuan-Ling Kao4Chih-Tien Chen5Kuo-Jen Chang6Department of Electronics Engineering, Chang Gung University, Taoyuan 333, TaiwanDepartment of Electronics Engineering, Chang Gung University, Taoyuan 333, TaiwanDepartment of Electronics Engineering, Chang Gung University, Taoyuan 333, TaiwanDepartment of Electronics Engineering, Chang Gung University, Taoyuan 333, TaiwanDepartment of Electronics Engineering, Chang Gung University, Taoyuan 333, TaiwanNational Chung-Shan Institute of Science and Technology, Materials and Electro-Optics Research Division, Taoyuan 333, TaiwanNational Chung-Shan Institute of Science and Technology, Materials and Electro-Optics Research Division, Taoyuan 333, TaiwanIn this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (<i>I</i><sub>DS</sub>) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower <i>I</i><sub>DS</sub> degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.https://www.mdpi.com/2077-0375/11/11/848QST substrateback-barrier layerhigh thermal conductivity |
| spellingShingle | Chong-Rong Huang Hsien-Chin Chiu Chia-Hao Liu Hsiang-Chun Wang Hsuan-Ling Kao Chih-Tien Chen Kuo-Jen Chang Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates Membranes QST substrate back-barrier layer high thermal conductivity |
| title | Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates |
| title_full | Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates |
| title_fullStr | Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates |
| title_full_unstemmed | Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates |
| title_short | Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates |
| title_sort | characteristic analysis of algan gan hemt with composited buffer layer on high heat dissipation poly aln substrates |
| topic | QST substrate back-barrier layer high thermal conductivity |
| url | https://www.mdpi.com/2077-0375/11/11/848 |
| work_keys_str_mv | AT chongronghuang characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT hsienchinchiu characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT chiahaoliu characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT hsiangchunwang characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT hsuanlingkao characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT chihtienchen characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates AT kuojenchang characteristicanalysisofalganganhemtwithcompositedbufferlayeronhighheatdissipationpolyalnsubstrates |