Changes in the electronic structure of the Si surface as a result of ion implantation
The composition, structure, and physicochemical properties of the surface and near-surface layers of silicon doped with low-energy (E0<5 keV) Ba+ and O2+ ions have been studied using a set of photoelectron and secondary electron spectroscopy methods. It has been established that in the process of...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2023-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/20/e3sconf_tt21c2023_04040.pdf |