Voltage division investigation of series short‐circuit fault on SiC MOSFETs and Si IGBTs
Abstract In power electronic systems, when a power device turns on by mistake, there would be at least two devices in the short‐circuit (SC) current loop, forming series short‐circuit (SSC) fault. In this paper, the dynamic characteristics of SiC MOSFETs, Si IGBTs in SSC are investigated based on th...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-02-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12374 |