A Poly Resistor Based Time Domain CMOS Temperature Sensor with 9b SAR and Fine Delay Line
This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CM...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-04-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/20/7/2053 |
| Summary: | This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CMOS process with general V<sub>TH</sub> transistors and the active die area was 0.432 mm<sup>2</sup>. The temperature resolution was 0.49 °C and the temperature error was from −1.6 to +0.6 °C over the range of 0 to 100 °C after two-point calibration. The supply voltage sensitivity was 0.085 °C/mV. The conversion rate was 25kHz and the energy efficiency was 7.2 nJ/sample. |
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| ISSN: | 1424-8220 |