A Poly Resistor Based Time Domain CMOS Temperature Sensor with 9b SAR and Fine Delay Line
This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CM...
Main Authors: | Zhiwei Xu, Sangjin Byun |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-04-01
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Series: | Sensors |
Subjects: | |
Online Access: | https://www.mdpi.com/1424-8220/20/7/2053 |
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