Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe<sub>y</sub>N Nanocrystals Embedded in GaN
Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga<inline-formula><math display="inline"><semantics><mi>δ</mi></semantics&...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-07-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/13/15/3294 |
| _version_ | 1797561433105367040 |
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| author | Andrea Navarro-Quezada Katarzyna Gas Tia Truglas Viola Bauernfeind Margherita Matzer Dominik Kreil Andreas Ney Heiko Groiss Maciej Sawicki Alberta Bonanni |
| author_facet | Andrea Navarro-Quezada Katarzyna Gas Tia Truglas Viola Bauernfeind Margherita Matzer Dominik Kreil Andreas Ney Heiko Groiss Maciej Sawicki Alberta Bonanni |
| author_sort | Andrea Navarro-Quezada |
| collection | DOAJ |
| description | Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga<inline-formula><math display="inline"><semantics><mi>δ</mi></semantics></math></inline-formula>FeN layers with Fe<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mi>y</mi></msub></semantics></math></inline-formula>N embedded nanocrystals (NCs) <i>via</i> Al<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mi>x</mi></msub></semantics></math></inline-formula>Ga<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></semantics></math></inline-formula>N buffers with different Al concentration <inline-formula><math display="inline"><semantics><mrow><mn>0</mn><mo><</mo><msub><mi>x</mi><mi>Al</mi></msub><mo><</mo><mn>41</mn></mrow></semantics></math></inline-formula>% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped <inline-formula><math display="inline"><semantics><mi>ε</mi></semantics></math></inline-formula>-Fe<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>N NCs takes place. Already at an Al concentration <inline-formula><math display="inline"><semantics><msub><mi>x</mi><mi>Al</mi></msub></semantics></math></inline-formula>≈ 5% the structural properties—phase, shape, orientation—as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic <inline-formula><math display="inline"><semantics><mi>γ</mi></semantics></math></inline-formula>’-Ga<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mi>y</mi></msub></semantics></math></inline-formula>Fe<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mrow><mn>4</mn><mo>−</mo><mi>y</mi></mrow></msub></semantics></math></inline-formula>N nanocrystals in the layer on the <inline-formula><math display="inline"><semantics><mrow><msub><mi>x</mi><mi>Al</mi></msub><mo>=</mo><mn>0</mn><mo>%</mo></mrow></semantics></math></inline-formula> buffer lies in-plane, the easy axis of the <inline-formula><math display="inline"><semantics><mi>ε</mi></semantics></math></inline-formula>-Fe<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>N NCs in all samples with Al<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mi>x</mi></msub></semantics></math></inline-formula>Ga<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></semantics></math></inline-formula>N buffers coincides with the <inline-formula><math display="inline"><semantics><mrow><mo>[</mo><mn>0001</mn><mo>]</mo></mrow></semantics></math></inline-formula> growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals. |
| first_indexed | 2024-03-10T18:14:52Z |
| format | Article |
| id | doaj.art-4a07d30b264c48e0a05a2e98bec8ed34 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T18:14:52Z |
| publishDate | 2020-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-4a07d30b264c48e0a05a2e98bec8ed342023-11-20T07:48:42ZengMDPI AGMaterials1996-19442020-07-011315329410.3390/ma13153294Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe<sub>y</sub>N Nanocrystals Embedded in GaNAndrea Navarro-Quezada0Katarzyna Gas1Tia Truglas2Viola Bauernfeind3Margherita Matzer4Dominik Kreil5Andreas Ney6Heiko Groiss7Maciej Sawicki8Alberta Bonanni9Institute of Semiconductor and Solid-State Physics, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, AustriaInstitute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, PolandChristian Doppler Laboratory for Nanoscale Phase Transformations, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, AustriaChristian Doppler Laboratory for Nanoscale Phase Transformations, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, AustriaInstitute of Semiconductor and Solid-State Physics, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, AustriaInstitute of Theoretical Physics, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, AustriaInstitute of Semiconductor and Solid-State Physics, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, AustriaChristian Doppler Laboratory for Nanoscale Phase Transformations, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, AustriaInstitute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, PolandInstitute of Semiconductor and Solid-State Physics, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, AustriaPhase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga<inline-formula><math display="inline"><semantics><mi>δ</mi></semantics></math></inline-formula>FeN layers with Fe<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mi>y</mi></msub></semantics></math></inline-formula>N embedded nanocrystals (NCs) <i>via</i> Al<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mi>x</mi></msub></semantics></math></inline-formula>Ga<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></semantics></math></inline-formula>N buffers with different Al concentration <inline-formula><math display="inline"><semantics><mrow><mn>0</mn><mo><</mo><msub><mi>x</mi><mi>Al</mi></msub><mo><</mo><mn>41</mn></mrow></semantics></math></inline-formula>% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped <inline-formula><math display="inline"><semantics><mi>ε</mi></semantics></math></inline-formula>-Fe<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>N NCs takes place. Already at an Al concentration <inline-formula><math display="inline"><semantics><msub><mi>x</mi><mi>Al</mi></msub></semantics></math></inline-formula>≈ 5% the structural properties—phase, shape, orientation—as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic <inline-formula><math display="inline"><semantics><mi>γ</mi></semantics></math></inline-formula>’-Ga<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mi>y</mi></msub></semantics></math></inline-formula>Fe<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mrow><mn>4</mn><mo>−</mo><mi>y</mi></mrow></msub></semantics></math></inline-formula>N nanocrystals in the layer on the <inline-formula><math display="inline"><semantics><mrow><msub><mi>x</mi><mi>Al</mi></msub><mo>=</mo><mn>0</mn><mo>%</mo></mrow></semantics></math></inline-formula> buffer lies in-plane, the easy axis of the <inline-formula><math display="inline"><semantics><mi>ε</mi></semantics></math></inline-formula>-Fe<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>N NCs in all samples with Al<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mi>x</mi></msub></semantics></math></inline-formula>Ga<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></semantics></math></inline-formula>N buffers coincides with the <inline-formula><math display="inline"><semantics><mrow><mo>[</mo><mn>0001</mn><mo>]</mo></mrow></semantics></math></inline-formula> growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.https://www.mdpi.com/1996-1944/13/15/3294magnetic anisotropyiron nitridesIII-nitridesnanocrystals |
| spellingShingle | Andrea Navarro-Quezada Katarzyna Gas Tia Truglas Viola Bauernfeind Margherita Matzer Dominik Kreil Andreas Ney Heiko Groiss Maciej Sawicki Alberta Bonanni Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe<sub>y</sub>N Nanocrystals Embedded in GaN Materials magnetic anisotropy iron nitrides III-nitrides nanocrystals |
| title | Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe<sub>y</sub>N Nanocrystals Embedded in GaN |
| title_full | Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe<sub>y</sub>N Nanocrystals Embedded in GaN |
| title_fullStr | Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe<sub>y</sub>N Nanocrystals Embedded in GaN |
| title_full_unstemmed | Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe<sub>y</sub>N Nanocrystals Embedded in GaN |
| title_short | Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe<sub>y</sub>N Nanocrystals Embedded in GaN |
| title_sort | out of plane magnetic anisotropy in ordered ensembles of fe sub y sub n nanocrystals embedded in gan |
| topic | magnetic anisotropy iron nitrides III-nitrides nanocrystals |
| url | https://www.mdpi.com/1996-1944/13/15/3294 |
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