Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates
Silicon (Si) films were deposited on low-cost graphite substrates by the electrochemical reduction of silicon dioxide nanoparticles (nano-SiO<sub>2</sub>) in calcium chloride (CaCl<sub>2</sub>), melted at 855 °C. Cyclic voltammetry (CV) was used to analyze the electrochemical...
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MDPI AG
2022-01-01
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Seria: | Nanomaterials |
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author | Muhammad Monirul Islam Hajer Said Ahmed Hichem Hamzaoui Adel Mnif Takeaki Sakurai Naoki Fukata Katsuhiro Akimoto |
author_facet | Muhammad Monirul Islam Hajer Said Ahmed Hichem Hamzaoui Adel Mnif Takeaki Sakurai Naoki Fukata Katsuhiro Akimoto |
author_sort | Muhammad Monirul Islam |
collection | DOAJ |
description | Silicon (Si) films were deposited on low-cost graphite substrates by the electrochemical reduction of silicon dioxide nanoparticles (nano-SiO<sub>2</sub>) in calcium chloride (CaCl<sub>2</sub>), melted at 855 °C. Cyclic voltammetry (CV) was used to analyze the electrochemical reduction mechanism of SiO<sub>2</sub> to form Si deposits on the graphite substrate. X-ray diffraction (XRD) along with Raman and photoluminescence (PL) results show that the crystallinity of the electrodeposited Si-films was improved with an increase of the applied reduction potential during the electrochemical process. Scanning electron microscopy (SEM) reveals that the size, shape, and morphology of the Si-layers can be controlled from Si nanowires to the microcrystalline Si particles by controlling the reduction potentials. In addition, the morphology of the obtained Si-layers seems to be correlated with both the substrate materials and particle size of the feed materials. Thus, the difference in the electron transfer rate at substrate/nano-SiO<sub>2</sub> interface due to different applied reduction potentials along with the dissolution rate of SiO<sub>2</sub> particles during the electrochemical reduction process were found to be crucial in determining the microstructural properties of the Si-films. |
first_indexed | 2024-03-09T23:25:15Z |
format | Article |
id | doaj.art-4a102f97a5774c40b35d95bf1e8ef8b6 |
institution | Directory Open Access Journal |
issn | 2079-4991 |
language | English |
last_indexed | 2024-03-09T23:25:15Z |
publishDate | 2022-01-01 |
publisher | MDPI AG |
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series | Nanomaterials |
spelling | doaj.art-4a102f97a5774c40b35d95bf1e8ef8b62023-11-23T17:19:33ZengMDPI AGNanomaterials2079-49912022-01-0112336310.3390/nano12030363Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite SubstratesMuhammad Monirul Islam0Hajer Said1Ahmed Hichem Hamzaoui2Adel Mnif3Takeaki Sakurai4Naoki Fukata5Katsuhiro Akimoto6Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Ibaraki, JapanUseful Materials Valorization Laboratory, National Centre for Research in Materials Science, Technological Park of Borj Cedria, B.P.73, Soliman 8027, TunisiaUseful Materials Valorization Laboratory, National Centre for Research in Materials Science, Technological Park of Borj Cedria, B.P.73, Soliman 8027, TunisiaUseful Materials Valorization Laboratory, National Centre for Research in Materials Science, Technological Park of Borj Cedria, B.P.73, Soliman 8027, TunisiaInstitute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Ibaraki, JapanInstitute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Ibaraki, JapanInstitute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Ibaraki, JapanSilicon (Si) films were deposited on low-cost graphite substrates by the electrochemical reduction of silicon dioxide nanoparticles (nano-SiO<sub>2</sub>) in calcium chloride (CaCl<sub>2</sub>), melted at 855 °C. Cyclic voltammetry (CV) was used to analyze the electrochemical reduction mechanism of SiO<sub>2</sub> to form Si deposits on the graphite substrate. X-ray diffraction (XRD) along with Raman and photoluminescence (PL) results show that the crystallinity of the electrodeposited Si-films was improved with an increase of the applied reduction potential during the electrochemical process. Scanning electron microscopy (SEM) reveals that the size, shape, and morphology of the Si-layers can be controlled from Si nanowires to the microcrystalline Si particles by controlling the reduction potentials. In addition, the morphology of the obtained Si-layers seems to be correlated with both the substrate materials and particle size of the feed materials. Thus, the difference in the electron transfer rate at substrate/nano-SiO<sub>2</sub> interface due to different applied reduction potentials along with the dissolution rate of SiO<sub>2</sub> particles during the electrochemical reduction process were found to be crucial in determining the microstructural properties of the Si-films.https://www.mdpi.com/2079-4991/12/3/363SiO<sub>2</sub>graphite substrateSi nanowireelectrochemical reductionmicrostructural properties |
spellingShingle | Muhammad Monirul Islam Hajer Said Ahmed Hichem Hamzaoui Adel Mnif Takeaki Sakurai Naoki Fukata Katsuhiro Akimoto Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates Nanomaterials SiO<sub>2</sub> graphite substrate Si nanowire electrochemical reduction microstructural properties |
title | Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates |
title_full | Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates |
title_fullStr | Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates |
title_full_unstemmed | Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates |
title_short | Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates |
title_sort | study of structural and optical properties of electrodeposited silicon films on graphite substrates |
topic | SiO<sub>2</sub> graphite substrate Si nanowire electrochemical reduction microstructural properties |
url | https://www.mdpi.com/2079-4991/12/3/363 |
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