Improved ferroelectric, magnetic and photovoltaic properties of Pr doped multiferroic bismuth ferrites for photovoltaic application
Multiferroic Bi1−xPrxFeO3 (x = 0.0, 0.05, 0.10, 0.15, 0.20) ceramic samples have been synthesized by sol-gel method. A detailed investigation has been made on structural, magnetic, electrical, optical and photovoltaic properties of Pr doped bismuth ferrites. A structural phase transition has been ob...
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Elsevier
2019-09-01
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Series: | Results in Physics |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379719315001 |
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author | Arti Sumit Kumar Parveen Kumar Rajan Walia Vivek Verma |
author_facet | Arti Sumit Kumar Parveen Kumar Rajan Walia Vivek Verma |
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description | Multiferroic Bi1−xPrxFeO3 (x = 0.0, 0.05, 0.10, 0.15, 0.20) ceramic samples have been synthesized by sol-gel method. A detailed investigation has been made on structural, magnetic, electrical, optical and photovoltaic properties of Pr doped bismuth ferrites. A structural phase transition has been observed from (R3c) rhombohedral for pristine sample BiFeO3 to (Pnma phase) orthorhombic structure for Bi0.85Pr0.15FeO3 sample. A co-existence of (R3c) rhombohedral and (Pnma) orthorhombic phases were observed for 0.05 < x ≤ 0.15 samples. It is observed that the dielectric properties depend on Pr percentage in BFO. The values of dielectric constants for BFO, ε′ = 64.21 and ε′′ = 9.09 have been increased with Pr doping and maximum for Pr = 0.20 sample with values, ε′ = 111.79 and ε′′ = 55.79 at 100 Hz. The magnetization value 0.24 emu/g for BFO increases with Pr doping to maximum value 0.50 emu/g for Bi0.8Pr0.2FeO3 sample. The P-E loop study of the samples shows the modified ferroelectric behavior with Pr doping. The enhanced ferroelectric properties show increase in photocurrent upon illumination of light. Energy band gap value Eg = 2.44 eV for BFO, decreases with Pr doping and minimum value, Eg = 2.27 eV for Pr = 0.15 sample. The improved ferroelectric, magnetic and photovoltaic properties of Pr doped bismuth ferrites offer a new application in ferroelectric/multiferroic based photovoltaic devices. Keywords: Multiferroic, Sol-gel, Ferroelectric, Magnetic, Photovoltaic |
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language | English |
last_indexed | 2024-12-20T13:53:10Z |
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spelling | doaj.art-4a1519e53db945a4883b6628e3114f1d2022-12-21T19:38:29ZengElsevierResults in Physics2211-37972019-09-0114Improved ferroelectric, magnetic and photovoltaic properties of Pr doped multiferroic bismuth ferrites for photovoltaic application Arti0Sumit Kumar1Parveen Kumar2Rajan Walia3Vivek Verma4Department of Physics, Hindu College, University of Delhi, Delhi 110007, India; Department of Physics and Astrophysics, University of Delhi, Delhi 110007, IndiaDepartment of Physics, Hindu College, University of Delhi, Delhi 110007, India; Department of Physics and Astrophysics, University of Delhi, Delhi 110007, IndiaDepartment of Physics, Hindu College, University of Delhi, Delhi 110007, India; Department of Physics and Astrophysics, University of Delhi, Delhi 110007, IndiaDepartment of Physics, DDU Gorakhpur University, Gorakhpur 273009, IndiaDepartment of Physics, Hindu College, University of Delhi, Delhi 110007, India; Corresponding author.Multiferroic Bi1−xPrxFeO3 (x = 0.0, 0.05, 0.10, 0.15, 0.20) ceramic samples have been synthesized by sol-gel method. A detailed investigation has been made on structural, magnetic, electrical, optical and photovoltaic properties of Pr doped bismuth ferrites. A structural phase transition has been observed from (R3c) rhombohedral for pristine sample BiFeO3 to (Pnma phase) orthorhombic structure for Bi0.85Pr0.15FeO3 sample. A co-existence of (R3c) rhombohedral and (Pnma) orthorhombic phases were observed for 0.05 < x ≤ 0.15 samples. It is observed that the dielectric properties depend on Pr percentage in BFO. The values of dielectric constants for BFO, ε′ = 64.21 and ε′′ = 9.09 have been increased with Pr doping and maximum for Pr = 0.20 sample with values, ε′ = 111.79 and ε′′ = 55.79 at 100 Hz. The magnetization value 0.24 emu/g for BFO increases with Pr doping to maximum value 0.50 emu/g for Bi0.8Pr0.2FeO3 sample. The P-E loop study of the samples shows the modified ferroelectric behavior with Pr doping. The enhanced ferroelectric properties show increase in photocurrent upon illumination of light. Energy band gap value Eg = 2.44 eV for BFO, decreases with Pr doping and minimum value, Eg = 2.27 eV for Pr = 0.15 sample. The improved ferroelectric, magnetic and photovoltaic properties of Pr doped bismuth ferrites offer a new application in ferroelectric/multiferroic based photovoltaic devices. Keywords: Multiferroic, Sol-gel, Ferroelectric, Magnetic, Photovoltaichttp://www.sciencedirect.com/science/article/pii/S2211379719315001 |
spellingShingle | Arti Sumit Kumar Parveen Kumar Rajan Walia Vivek Verma Improved ferroelectric, magnetic and photovoltaic properties of Pr doped multiferroic bismuth ferrites for photovoltaic application Results in Physics |
title | Improved ferroelectric, magnetic and photovoltaic properties of Pr doped multiferroic bismuth ferrites for photovoltaic application |
title_full | Improved ferroelectric, magnetic and photovoltaic properties of Pr doped multiferroic bismuth ferrites for photovoltaic application |
title_fullStr | Improved ferroelectric, magnetic and photovoltaic properties of Pr doped multiferroic bismuth ferrites for photovoltaic application |
title_full_unstemmed | Improved ferroelectric, magnetic and photovoltaic properties of Pr doped multiferroic bismuth ferrites for photovoltaic application |
title_short | Improved ferroelectric, magnetic and photovoltaic properties of Pr doped multiferroic bismuth ferrites for photovoltaic application |
title_sort | improved ferroelectric magnetic and photovoltaic properties of pr doped multiferroic bismuth ferrites for photovoltaic application |
url | http://www.sciencedirect.com/science/article/pii/S2211379719315001 |
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