Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors

Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors

In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the conduction mechanism and degradation characteristics of memristors with different electrode materials. The IGZO memristor exhibits abrupt switching characteristics with the Pd electrode owing to the formation and des...

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Bibliographic Details
Main Authors:	Woo Sik Choi, Min Suk Song, Hyungjin Kim, Dae Hwan Kim
Format:	Article
Language:	English
Published:	MDPI AG 2022-10-01
Series:	Micromachines
Subjects:	memristor InGaZnO gradual and abrupt switching conduction mechanism oxygen vacancy random telegraph noise
Online Access:	https://www.mdpi.com/2072-666X/13/11/1870

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