Barrier penetration effects on thermopower in semiconductor quantum wells

Finite confinement effects, due to the penetration of the electron wavefunction into the barriers of a square well potential, on the low–temperature acoustic-phonon-limited thermopower (TP) of 2DEG are investigated. The 2DEG is considered to be scattered by acoustic phonons via screened deformation...

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Main Authors: R. G. Vaidya, N. S. Sankeshwar, B. G. Mulimani
Format: Article
Language:English
Published: AIP Publishing LLC 2014-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4861597
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author R. G. Vaidya
N. S. Sankeshwar
B. G. Mulimani
author_facet R. G. Vaidya
N. S. Sankeshwar
B. G. Mulimani
author_sort R. G. Vaidya
collection DOAJ
description Finite confinement effects, due to the penetration of the electron wavefunction into the barriers of a square well potential, on the low–temperature acoustic-phonon-limited thermopower (TP) of 2DEG are investigated. The 2DEG is considered to be scattered by acoustic phonons via screened deformation potential and piezoelectric couplings. Incorporating the barrier penetration effects, the dependences of diffusion TP and phonon drag TP on barrier height are studied. An expression for phonon drag TP is obtained. Numerical calculations of temperature dependences of mobility and TP for a 10 nm InN/In xGa1−xN quantum well for different values of x show that the magnitude and behavior of TP are altered. A decrease in the barrier height from 500 meV by a factor of 5, enhances the mobility by 34% and reduces the TP by 58% at 20 K. Results are compared with those of infinite barrier approximation.
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spelling doaj.art-4a1f69b7bd8b40178e5e5b865bf465fb2022-12-21T19:39:59ZengAIP Publishing LLCAIP Advances2158-32262014-01-0141017107017107-710.1063/1.4861597008401ADVBarrier penetration effects on thermopower in semiconductor quantum wellsR. G. Vaidya0N. S. Sankeshwar1B. G. Mulimani2Department of Physics, Karnatak University, Dharwad, Karnataka, India – 580 003Department of Physics, Karnatak University, Dharwad, Karnataka, India – 580 003Department of Physics, Karnatak University, Dharwad, Karnataka, India – 580 003Finite confinement effects, due to the penetration of the electron wavefunction into the barriers of a square well potential, on the low–temperature acoustic-phonon-limited thermopower (TP) of 2DEG are investigated. The 2DEG is considered to be scattered by acoustic phonons via screened deformation potential and piezoelectric couplings. Incorporating the barrier penetration effects, the dependences of diffusion TP and phonon drag TP on barrier height are studied. An expression for phonon drag TP is obtained. Numerical calculations of temperature dependences of mobility and TP for a 10 nm InN/In xGa1−xN quantum well for different values of x show that the magnitude and behavior of TP are altered. A decrease in the barrier height from 500 meV by a factor of 5, enhances the mobility by 34% and reduces the TP by 58% at 20 K. Results are compared with those of infinite barrier approximation.http://dx.doi.org/10.1063/1.4861597
spellingShingle R. G. Vaidya
N. S. Sankeshwar
B. G. Mulimani
Barrier penetration effects on thermopower in semiconductor quantum wells
AIP Advances
title Barrier penetration effects on thermopower in semiconductor quantum wells
title_full Barrier penetration effects on thermopower in semiconductor quantum wells
title_fullStr Barrier penetration effects on thermopower in semiconductor quantum wells
title_full_unstemmed Barrier penetration effects on thermopower in semiconductor quantum wells
title_short Barrier penetration effects on thermopower in semiconductor quantum wells
title_sort barrier penetration effects on thermopower in semiconductor quantum wells
url http://dx.doi.org/10.1063/1.4861597
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AT bgmulimani barrierpenetrationeffectsonthermopowerinsemiconductorquantumwells