Improvement the efficacy of Al/CuPc/n-Si/Al Schottky diode based on strong light absorption and high photocarriers response
Copper phthalocyanine has been prepared by simple chemical approach and its structural and optical properties were investigated. X-ray diffraction pattern exhibits a notable peak at $2\theta =6.75^\circ $ assigned to the $\alpha -\,$ phase of CuPc. SEM images show the particles distributed in nanosp...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/abb5ca |
| _version_ | 1827868566806855680 |
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| author | Elsayed Elgazzar |
| author_facet | Elsayed Elgazzar |
| author_sort | Elsayed Elgazzar |
| collection | DOAJ |
| description | Copper phthalocyanine has been prepared by simple chemical approach and its structural and optical properties were investigated. X-ray diffraction pattern exhibits a notable peak at $2\theta =6.75^\circ $ assigned to the $\alpha -\,$ phase of CuPc. SEM images show the particles distributed in nanospheres with average size at about 50 nm. The linear optical constants like optical band gap $({E}_{g})$ and dielectric constants ( $\varepsilon ^{\prime} ,\varepsilon ^{\prime\prime} $ ) were estimated from transmittance and reflectance spectra in the wavelength range from 250 to 900 nm. The energy gap was found to be 1.62 and 2.90 eV dependent on the incident photon energy. Al/CuPc/n-Si/Al Schottky diode has been fabricated using thermal evaporation technique. The electronic parameters such as the ideality factor $(n),$ series resistance $({R}_{s}),$ and barrier height ( ${\phi }_{b}$ ) were evaluated in dark by applying the ( I – V ), Cheung-Chung, and Norde models. At various illumination intensities, the photocurrent sensitivity was studied based on the response of trapped charge carriers. At 1 Mhz, the built-in voltage $({V}_{bi})$ and donor concentration $({N}_{d})$ were calculated from ( C – V ) measurements. The findings revealed that CuPc/n-type Si can be used as photodiode in optoelectronic applications. |
| first_indexed | 2024-03-12T15:33:16Z |
| format | Article |
| id | doaj.art-4a30f7eeea4c48c48243dd85834195be |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:33:16Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
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| series | Materials Research Express |
| spelling | doaj.art-4a30f7eeea4c48c48243dd85834195be2023-08-09T16:19:26ZengIOP PublishingMaterials Research Express2053-15912020-01-017909510210.1088/2053-1591/abb5caImprovement the efficacy of Al/CuPc/n-Si/Al Schottky diode based on strong light absorption and high photocarriers responseElsayed Elgazzar0https://orcid.org/0000-0001-9927-9846Department of Physics, Faculty of Science, Suez Canal University , Ismailia, EgyptCopper phthalocyanine has been prepared by simple chemical approach and its structural and optical properties were investigated. X-ray diffraction pattern exhibits a notable peak at $2\theta =6.75^\circ $ assigned to the $\alpha -\,$ phase of CuPc. SEM images show the particles distributed in nanospheres with average size at about 50 nm. The linear optical constants like optical band gap $({E}_{g})$ and dielectric constants ( $\varepsilon ^{\prime} ,\varepsilon ^{\prime\prime} $ ) were estimated from transmittance and reflectance spectra in the wavelength range from 250 to 900 nm. The energy gap was found to be 1.62 and 2.90 eV dependent on the incident photon energy. Al/CuPc/n-Si/Al Schottky diode has been fabricated using thermal evaporation technique. The electronic parameters such as the ideality factor $(n),$ series resistance $({R}_{s}),$ and barrier height ( ${\phi }_{b}$ ) were evaluated in dark by applying the ( I – V ), Cheung-Chung, and Norde models. At various illumination intensities, the photocurrent sensitivity was studied based on the response of trapped charge carriers. At 1 Mhz, the built-in voltage $({V}_{bi})$ and donor concentration $({N}_{d})$ were calculated from ( C – V ) measurements. The findings revealed that CuPc/n-type Si can be used as photodiode in optoelectronic applications.https://doi.org/10.1088/2053-1591/abb5cacopper phthalocyanineoptical constantselectronic parametersphotodiodestructural properties |
| spellingShingle | Elsayed Elgazzar Improvement the efficacy of Al/CuPc/n-Si/Al Schottky diode based on strong light absorption and high photocarriers response Materials Research Express copper phthalocyanine optical constants electronic parameters photodiode structural properties |
| title | Improvement the efficacy of Al/CuPc/n-Si/Al Schottky diode based on strong light absorption and high photocarriers response |
| title_full | Improvement the efficacy of Al/CuPc/n-Si/Al Schottky diode based on strong light absorption and high photocarriers response |
| title_fullStr | Improvement the efficacy of Al/CuPc/n-Si/Al Schottky diode based on strong light absorption and high photocarriers response |
| title_full_unstemmed | Improvement the efficacy of Al/CuPc/n-Si/Al Schottky diode based on strong light absorption and high photocarriers response |
| title_short | Improvement the efficacy of Al/CuPc/n-Si/Al Schottky diode based on strong light absorption and high photocarriers response |
| title_sort | improvement the efficacy of al cupc n si al schottky diode based on strong light absorption and high photocarriers response |
| topic | copper phthalocyanine optical constants electronic parameters photodiode structural properties |
| url | https://doi.org/10.1088/2053-1591/abb5ca |
| work_keys_str_mv | AT elsayedelgazzar improvementtheefficacyofalcupcnsialschottkydiodebasedonstronglightabsorptionandhighphotocarriersresponse |