Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures
The switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices of different structures were experimented after exposure to a gamma irradiation environment. The experimental results for on-state were studied. The comparisons are shown f...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-05-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/12/10/2194 |
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| author | Lei Shu Huai-Lin Liao Zi-Yuan Wu Xing-Yu Fang Shi-Wei Liang Tong-De Li Liang Wang Jun Wang Yuan-Fu Zhao |
| author_facet | Lei Shu Huai-Lin Liao Zi-Yuan Wu Xing-Yu Fang Shi-Wei Liang Tong-De Li Liang Wang Jun Wang Yuan-Fu Zhao |
| author_sort | Lei Shu |
| collection | DOAJ |
| description | The switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices of different structures were experimented after exposure to a gamma irradiation environment. The experimental results for on-state were studied. The comparisons are shown for SiC MOSFET power devices with planar, trench and double trench structures tested for total ionizing dose (TID). A higher degradation of the switching characteristics was observed for the double trench structure. The physical mechanisms for these switching characteristics variations were analyzed. In addition, they were confirmed by technology computer-aided design (TCAD) simulation. |
| first_indexed | 2024-03-11T03:47:33Z |
| format | Article |
| id | doaj.art-4a86ee041acd47de9f5469baa2288d44 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-11T03:47:33Z |
| publishDate | 2023-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-4a86ee041acd47de9f5469baa2288d442023-11-18T01:09:03ZengMDPI AGElectronics2079-92922023-05-011210219410.3390/electronics12102194Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different StructuresLei Shu0Huai-Lin Liao1Zi-Yuan Wu2Xing-Yu Fang3Shi-Wei Liang4Tong-De Li5Liang Wang6Jun Wang7Yuan-Fu Zhao8School of Integrated Circuit, Peking University, Beijing 100871, ChinaSchool of Integrated Circuit, Peking University, Beijing 100871, ChinaCollege of Electrical and Information Engineering, Hunan University, Changsha 410082, ChinaBeijing Microelectronics Technology Institute, Beijing 100076, ChinaCollege of Electrical and Information Engineering, Hunan University, Changsha 410082, ChinaBeijing Microelectronics Technology Institute, Beijing 100076, ChinaBeijing Microelectronics Technology Institute, Beijing 100076, ChinaCollege of Electrical and Information Engineering, Hunan University, Changsha 410082, ChinaBeijing Microelectronics Technology Institute, Beijing 100076, ChinaThe switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices of different structures were experimented after exposure to a gamma irradiation environment. The experimental results for on-state were studied. The comparisons are shown for SiC MOSFET power devices with planar, trench and double trench structures tested for total ionizing dose (TID). A higher degradation of the switching characteristics was observed for the double trench structure. The physical mechanisms for these switching characteristics variations were analyzed. In addition, they were confirmed by technology computer-aided design (TCAD) simulation.https://www.mdpi.com/2079-9292/12/10/2194SiC MOSFETTIDswitching characteristicTCAD simulations |
| spellingShingle | Lei Shu Huai-Lin Liao Zi-Yuan Wu Xing-Yu Fang Shi-Wei Liang Tong-De Li Liang Wang Jun Wang Yuan-Fu Zhao Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures Electronics SiC MOSFET TID switching characteristic TCAD simulations |
| title | Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures |
| title_full | Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures |
| title_fullStr | Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures |
| title_full_unstemmed | Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures |
| title_short | Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures |
| title_sort | effects of gamma irradiation on switching characteristics of sic mosfet power devices of different structures |
| topic | SiC MOSFET TID switching characteristic TCAD simulations |
| url | https://www.mdpi.com/2079-9292/12/10/2194 |
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