Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

The switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices of different structures were experimented after exposure to a gamma irradiation environment. The experimental results for on-state were studied. The comparisons are shown f...

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Bibliographic Details
Main Authors:	Lei Shu, Huai-Lin Liao, Zi-Yuan Wu, Xing-Yu Fang, Shi-Wei Liang, Tong-De Li, Liang Wang, Jun Wang, Yuan-Fu Zhao
Format:	Article
Language:	English
Published:	MDPI AG 2023-05-01
Series:	Electronics
Subjects:	SiC MOSFET TID switching characteristic TCAD simulations
Online Access:	https://www.mdpi.com/2079-9292/12/10/2194

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