Influence of Cd<sub>х</sub>Hg<sub>1-х</sub>Te epitaxial layers defects on photo-electric parameters of matrix detector devices
In spite of the fact that solid solution CdxHg1-xTe is the most sensitive and effective semiconductor material for matrix photodetectors, weak internuclear connection Hg–Cd and high energy диссоциации molecules Tе2 result in formation CdxHg1-xTe epitaxial layers defects in process MBE epitaxial grow...
Main Authors: | V. V. Arbenina, A. S. Kashuba, Е. V. Permikina |
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Format: | Article |
Language: | Russian |
Published: |
MIREA - Russian Technological University
2013-12-01
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Series: | Тонкие химические технологии |
Subjects: | |
Online Access: | https://www.finechem-mirea.ru/jour/article/view/517 |
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