Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms
Abstract The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high ext...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2019-12-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-019-3179-4 |
| _version_ | 1827848164575543296 |
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| author | Hang Yang Wei Chen Xiaoming Zheng Dongsheng Yang Yuze Hu Xiangzhe Zhang Xin Ye Yi Zhang Tian Jiang Gang Peng Xueao Zhang Renyan Zhang Chuyun Deng Shiqiao Qin |
| author_facet | Hang Yang Wei Chen Xiaoming Zheng Dongsheng Yang Yuze Hu Xiangzhe Zhang Xin Ye Yi Zhang Tian Jiang Gang Peng Xueao Zhang Renyan Zhang Chuyun Deng Shiqiao Qin |
| author_sort | Hang Yang |
| collection | DOAJ |
| description | Abstract The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 1010 Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices. |
| first_indexed | 2024-03-12T09:43:03Z |
| format | Article |
| id | doaj.art-4aba5c6ad64b4919860d386a51f3a788 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:43:03Z |
| publishDate | 2019-12-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-4aba5c6ad64b4919860d386a51f3a7882023-09-02T13:06:41ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-12-011411610.1186/s11671-019-3179-4Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se NanofilmsHang Yang0Wei Chen1Xiaoming Zheng2Dongsheng Yang3Yuze Hu4Xiangzhe Zhang5Xin Ye6Yi Zhang7Tian Jiang8Gang Peng9Xueao Zhang10Renyan Zhang11Chuyun Deng12Shiqiao Qin13College of Arts and Science, National University of Defense TechnologyCollege of Advanced Interdisciplinary Studies, National University of Defense TechnologyCollege of Arts and Science, National University of Defense TechnologyCollege of Advanced Interdisciplinary Studies, National University of Defense TechnologyCollege of Advanced Interdisciplinary Studies, National University of Defense TechnologyCollege of Advanced Interdisciplinary Studies, National University of Defense TechnologyDepartment of Chemistry, National University of SingaporeCollege of Arts and Science, National University of Defense TechnologyCollege of Advanced Interdisciplinary Studies, National University of Defense TechnologyCollege of Arts and Science, National University of Defense TechnologyCollege of Physical Science and Technology, Xiamen UniversityCollege of Advanced Interdisciplinary Studies, National University of Defense TechnologyCollege of Arts and Science, National University of Defense TechnologyCollege of Advanced Interdisciplinary Studies, National University of Defense TechnologyAbstract The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 1010 Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.https://doi.org/10.1186/s11671-019-3179-4Bi2O2SeMultilayerPhotodetectorNear-Infrared |
| spellingShingle | Hang Yang Wei Chen Xiaoming Zheng Dongsheng Yang Yuze Hu Xiangzhe Zhang Xin Ye Yi Zhang Tian Jiang Gang Peng Xueao Zhang Renyan Zhang Chuyun Deng Shiqiao Qin Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms Nanoscale Research Letters Bi2O2Se Multilayer Photodetector Near-Infrared |
| title | Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms |
| title_full | Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms |
| title_fullStr | Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms |
| title_full_unstemmed | Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms |
| title_short | Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms |
| title_sort | near infrared photoelectric properties of multilayer bi2o2se nanofilms |
| topic | Bi2O2Se Multilayer Photodetector Near-Infrared |
| url | https://doi.org/10.1186/s11671-019-3179-4 |
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