Lattice Thermal Conductivity of Wurtzite Bulk and Zinc Blende CdSe Nanowires and Nanoplayer
By using Morelli-Callaway model and some structure dependent parameters, theoretical calculations of LTC for wurtzite Bulk CdSe, zinc blende CdSe nanowire and nanolayer are performed. The theoretical and experimental correlation for CdSe NWs with diameter 41, 52 and 88nm and nanolayer with thickn...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Tishk International University
2017-09-01
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| Series: | Eurasian Journal of Science and Engineering |
| Subjects: | |
| Online Access: | http://eajse.org/wp-content/uploads/2015/12/Lattice-Thermal-Conductivity.pdf |
| Summary: | By using Morelli-Callaway model and some structure dependent parameters, theoretical
calculations of LTC for wurtzite Bulk CdSe, zinc blende CdSe nanowire and nanolayer are performed.
The theoretical and experimental correlation for CdSe NWs with diameter 41, 52 and 88nm and
nanolayer with thickness of 4.3nm are investigated. While, the direction of growth of ZB CdSe is <110>,
one equation for longitudinal and two different equation for transverse mode are used for calculating
acoustic group velocity. Therefore, Morelli-Callaway model splits to three branches. There are six
phonon transfer scattering rate, which are umklapp, normal, boundary impurity, dislocation, and
phonon-electron scattering rate. In different temperatures, different phonon scattering process appeal.
The shape of LTC as a function of temperature has a bell shape that all phonon scattering rate
configured this shape. The peak of lattice thermal conductivity shift to higher temperature with
decreasing the size of CdSe nanostructure. In summarize, the LTC for a particular temperature depends
on the size and crystal structure. At 300K thermal conductivity of WZ bulk CdSe has less value than all
ZB CdSe NWs mentioned in this work. Also quantum confinement effect cause mechanical and thermal
parameters change with decreasing the size and dimension of CdSe semiconductor. |
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| ISSN: | 2414-5629 2414-5602 |