Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip
An increasing share of fluctuating and intermittent renewable energy sources can cause over-currents (OCs) in the power system. The heat generated during OCs increases the junction temperature of semiconductor devices and could even lead to thermal runaway if thermal limits are reached. In order to...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-01-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/17/2/462 |
| _version_ | 1797344141697351680 |
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| author | Shubhangi Bhadoria Frans Dijkhuizen Xu Zhang Li Ran Hans-Peter Nee |
| author_facet | Shubhangi Bhadoria Frans Dijkhuizen Xu Zhang Li Ran Hans-Peter Nee |
| author_sort | Shubhangi Bhadoria |
| collection | DOAJ |
| description | An increasing share of fluctuating and intermittent renewable energy sources can cause over-currents (OCs) in the power system. The heat generated during OCs increases the junction temperature of semiconductor devices and could even lead to thermal runaway if thermal limits are reached. In order to keep the junction temperature within the thermal limit of the semiconductor, the power module structure with heat-absorbing material below the chip is investigated through COMSOL Multiphysics simulations. The upper limits of the junction temperature for Silicon (Si) and Silicon Carbide (SiC) are assumed to be 175 and 250 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C, respectively. The heat-absorbing materials considered for analysis are a copper block and a copper block with phase change materials (PCMs). Two times, three times, and four times of OCs would be discussed for durations of a few hundred milliseconds and seconds. This article also discusses the thermal performance of a copper block and a copper block with PCMs. PCMs used for Si and SiC are LM108 and Lithium, respectively. It is concluded that the copper block just below the semiconductor chip would enable OC capability in Si and SiC devices and would be more convenient to manufacture as compared to the copper block with PCM. |
| first_indexed | 2024-03-08T10:58:03Z |
| format | Article |
| id | doaj.art-4b12a7abe204486c88d5233924b46ce3 |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-03-08T10:58:03Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-4b12a7abe204486c88d5233924b46ce32024-01-26T16:20:05ZengMDPI AGEnergies1996-10732024-01-0117246210.3390/en17020462Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the ChipShubhangi Bhadoria0Frans Dijkhuizen1Xu Zhang2Li Ran3Hans-Peter Nee4School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, 11428 Stockholm, SwedenHitachi Energy Research, 72178 Västerås, SwedenState Key Laboratory of Electrical Insulation and Power Equipment, Xi′an Jiaotong University, Xi′an 710049, ChinaSchool of Engineering, University of Warwick, Coventry CV4 7AL, UKSchool of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, 11428 Stockholm, SwedenAn increasing share of fluctuating and intermittent renewable energy sources can cause over-currents (OCs) in the power system. The heat generated during OCs increases the junction temperature of semiconductor devices and could even lead to thermal runaway if thermal limits are reached. In order to keep the junction temperature within the thermal limit of the semiconductor, the power module structure with heat-absorbing material below the chip is investigated through COMSOL Multiphysics simulations. The upper limits of the junction temperature for Silicon (Si) and Silicon Carbide (SiC) are assumed to be 175 and 250 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C, respectively. The heat-absorbing materials considered for analysis are a copper block and a copper block with phase change materials (PCMs). Two times, three times, and four times of OCs would be discussed for durations of a few hundred milliseconds and seconds. This article also discusses the thermal performance of a copper block and a copper block with PCMs. PCMs used for Si and SiC are LM108 and Lithium, respectively. It is concluded that the copper block just below the semiconductor chip would enable OC capability in Si and SiC devices and would be more convenient to manufacture as compared to the copper block with PCM.https://www.mdpi.com/1996-1073/17/2/462bonding techniquescopperheat-absorbing materialshigh-temperaturejunction temperaturenew layouts |
| spellingShingle | Shubhangi Bhadoria Frans Dijkhuizen Xu Zhang Li Ran Hans-Peter Nee Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip Energies bonding techniques copper heat-absorbing materials high-temperature junction temperature new layouts |
| title | Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip |
| title_full | Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip |
| title_fullStr | Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip |
| title_full_unstemmed | Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip |
| title_short | Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip |
| title_sort | over current capability of silicon carbide and silicon devices for short power pulses with copper and phase change materials below the chip |
| topic | bonding techniques copper heat-absorbing materials high-temperature junction temperature new layouts |
| url | https://www.mdpi.com/1996-1073/17/2/462 |
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