A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier Concentration
A complementary metal-oxide-semiconductor (CMOS)-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is designed and analyzed theoretically. The CIPMRM has a compacted footprint of 49.3 μm<sup>2</sup> (R = 2 μm), a bit rate of 36.5 Gbps, insertion loss of −9.8 dB, a stat...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-04-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/9/5/272 |
| _version_ | 1797496503180197888 |
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| author | Jiaqi Sun Wenwu Wang Zhihua Li |
| author_facet | Jiaqi Sun Wenwu Wang Zhihua Li |
| author_sort | Jiaqi Sun |
| collection | DOAJ |
| description | A complementary metal-oxide-semiconductor (CMOS)-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is designed and analyzed theoretically. The CIPMRM has a compacted footprint of 49.3 μm<sup>2</sup> (R = 2 μm), a bit rate of 36.5 Gbps, insertion loss of −9.8 dB, a static extinction ratio of 21.7 dB, and energy consumption of 4.40 pJ/bit as 2.2 V peak-to-peak voltage is applied at 1550 nm. Besides, the method of resonance tuning by carrier concentration is proposed to compensate for the wavelength mismatch between the CIPMRM resonance and the laser, resulting from temperature and line width variation of the CIPMRM. This method has a faster response time and a greater ability to shift the resonant wavelength compared with the method of thermo-optic resonance tuning. The proposed scheme provides a route for realizing the compacted size modulator for optoelectronic integration. |
| first_indexed | 2024-03-10T03:04:35Z |
| format | Article |
| id | doaj.art-4b4f54d47d7a4a73a4bf1989604210a9 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-10T03:04:35Z |
| publishDate | 2022-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-4b4f54d47d7a4a73a4bf1989604210a92023-11-23T12:39:51ZengMDPI AGPhotonics2304-67322022-04-019527210.3390/photonics9050272A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier ConcentrationJiaqi Sun0Wenwu Wang1Zhihua Li2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaA complementary metal-oxide-semiconductor (CMOS)-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is designed and analyzed theoretically. The CIPMRM has a compacted footprint of 49.3 μm<sup>2</sup> (R = 2 μm), a bit rate of 36.5 Gbps, insertion loss of −9.8 dB, a static extinction ratio of 21.7 dB, and energy consumption of 4.40 pJ/bit as 2.2 V peak-to-peak voltage is applied at 1550 nm. Besides, the method of resonance tuning by carrier concentration is proposed to compensate for the wavelength mismatch between the CIPMRM resonance and the laser, resulting from temperature and line width variation of the CIPMRM. This method has a faster response time and a greater ability to shift the resonant wavelength compared with the method of thermo-optic resonance tuning. The proposed scheme provides a route for realizing the compacted size modulator for optoelectronic integration.https://www.mdpi.com/2304-6732/9/5/272plasmonic modulatorCMOScarrier-injectionresonance tuning |
| spellingShingle | Jiaqi Sun Wenwu Wang Zhihua Li A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier Concentration Photonics plasmonic modulator CMOS carrier-injection resonance tuning |
| title | A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier Concentration |
| title_full | A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier Concentration |
| title_fullStr | A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier Concentration |
| title_full_unstemmed | A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier Concentration |
| title_short | A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator with Resonance Tuning by Carrier Concentration |
| title_sort | cmos compatible carrier injection plasmonic micro ring modulator with resonance tuning by carrier concentration |
| topic | plasmonic modulator CMOS carrier-injection resonance tuning |
| url | https://www.mdpi.com/2304-6732/9/5/272 |
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