Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers
The 1.55 μm waveband integrated external cavity tunable diode lasers have excellent merits such as their small volume, low cost, low power consumption, wide tuning range, narrow linewidth, large side mode suppression ratio, and high output power. These merits have attracted many applications for the...
| Main Authors: | , , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-11-01
|
| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/10/11/1287 |
| _version_ | 1797457962966450176 |
|---|---|
| author | Linyu Zhang Xuan Li Wei Luo Junce Shi Kangxun Sun Meiye Qiu Zhaoxuan Zheng Huiying Kong Jinhui Zhou Chi Zhang Zaijin Li Yi Qu Zhongliang Qiao Lin Li |
| author_facet | Linyu Zhang Xuan Li Wei Luo Junce Shi Kangxun Sun Meiye Qiu Zhaoxuan Zheng Huiying Kong Jinhui Zhou Chi Zhang Zaijin Li Yi Qu Zhongliang Qiao Lin Li |
| author_sort | Linyu Zhang |
| collection | DOAJ |
| description | The 1.55 μm waveband integrated external cavity tunable diode lasers have excellent merits such as their small volume, low cost, low power consumption, wide tuning range, narrow linewidth, large side mode suppression ratio, and high output power. These merits have attracted many applications for the lasers, such as in wavelength division multiplexing, passive optical networks, mobile backhaul, and spectral sensing technology. In this paper, firstly, the basic structure and principle of integrated external cavity tunable diode lasers are introduced, and then two main integrated structures of 1.55 μm waveband external cavity tunable diode lasers are reviewed and compared in detail, namely the hybrid integrated structure and monolithic integrated structure of 1.55 μm waveband integrated external cavity tunable diode lasers. Finally, the research progress in 1.55 μm waveband integrated external cavity tunable diode lasers in the last decade are summarised, and the advantages and disadvantages of 1.55 μm waveband integrated external cavity tunable diode lasers are analysed. The results show that, with the transformation of optical communication into more complex modulation formats, it is necessary to integrate miniature 1.55 μm waveband external cavity tunable diode lasers. Low-cost integrated 1.55 μm waveband external cavity tunable diode lasers are expected to be used in the next generation of optical transceivers in small-factor modules. |
| first_indexed | 2024-03-09T16:31:18Z |
| format | Article |
| id | doaj.art-4b598ea1c30448eea65dc7133cac3b70 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-09T16:31:18Z |
| publishDate | 2023-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-4b598ea1c30448eea65dc7133cac3b702023-11-24T15:01:45ZengMDPI AGPhotonics2304-67322023-11-011011128710.3390/photonics10111287Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode LasersLinyu Zhang0Xuan Li1Wei Luo2Junce Shi3Kangxun Sun4Meiye Qiu5Zhaoxuan Zheng6Huiying Kong7Jinhui Zhou8Chi Zhang9Zaijin Li10Yi Qu11Zhongliang Qiao12Lin Li13Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, Hainan International Joint Research Center for Semiconductor Lasers, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaThe 1.55 μm waveband integrated external cavity tunable diode lasers have excellent merits such as their small volume, low cost, low power consumption, wide tuning range, narrow linewidth, large side mode suppression ratio, and high output power. These merits have attracted many applications for the lasers, such as in wavelength division multiplexing, passive optical networks, mobile backhaul, and spectral sensing technology. In this paper, firstly, the basic structure and principle of integrated external cavity tunable diode lasers are introduced, and then two main integrated structures of 1.55 μm waveband external cavity tunable diode lasers are reviewed and compared in detail, namely the hybrid integrated structure and monolithic integrated structure of 1.55 μm waveband integrated external cavity tunable diode lasers. Finally, the research progress in 1.55 μm waveband integrated external cavity tunable diode lasers in the last decade are summarised, and the advantages and disadvantages of 1.55 μm waveband integrated external cavity tunable diode lasers are analysed. The results show that, with the transformation of optical communication into more complex modulation formats, it is necessary to integrate miniature 1.55 μm waveband external cavity tunable diode lasers. Low-cost integrated 1.55 μm waveband external cavity tunable diode lasers are expected to be used in the next generation of optical transceivers in small-factor modules.https://www.mdpi.com/2304-6732/10/11/12871.55 μmintegrated external cavitytunablediode laser |
| spellingShingle | Linyu Zhang Xuan Li Wei Luo Junce Shi Kangxun Sun Meiye Qiu Zhaoxuan Zheng Huiying Kong Jinhui Zhou Chi Zhang Zaijin Li Yi Qu Zhongliang Qiao Lin Li Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers Photonics 1.55 μm integrated external cavity tunable diode laser |
| title | Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers |
| title_full | Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers |
| title_fullStr | Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers |
| title_full_unstemmed | Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers |
| title_short | Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers |
| title_sort | review of 1 55 μm waveband integrated external cavity tunable diode lasers |
| topic | 1.55 μm integrated external cavity tunable diode laser |
| url | https://www.mdpi.com/2304-6732/10/11/1287 |
| work_keys_str_mv | AT linyuzhang reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT xuanli reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT weiluo reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT junceshi reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT kangxunsun reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT meiyeqiu reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT zhaoxuanzheng reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT huiyingkong reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT jinhuizhou reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT chizhang reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT zaijinli reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT yiqu reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT zhongliangqiao reviewof155mmwavebandintegratedexternalcavitytunablediodelasers AT linli reviewof155mmwavebandintegratedexternalcavitytunablediodelasers |