Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices
In this study, we report the impact of structural 4H-SiC epitaxial defects on the electrical characteristics and blocking capabilities of SiC power devices. The detection and classification of the various crystal defects existing in 4H-SiC epitaxial layers and substrates was carried out with a comme...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2022-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/acaa1f |
| _version_ | 1797746531449700352 |
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| author | E Kodolitsch V Sodan M Krieger Heiko B Weber N Tsavdaris |
| author_facet | E Kodolitsch V Sodan M Krieger Heiko B Weber N Tsavdaris |
| author_sort | E Kodolitsch |
| collection | DOAJ |
| description | In this study, we report the impact of structural 4H-SiC epitaxial defects on the electrical characteristics and blocking capabilities of SiC power devices. The detection and classification of the various crystal defects existing in 4H-SiC epitaxial layers and substrates was carried out with a commercial inspection tool using an optical microscope with a photoluminescence channel (PL). After the fabrication of dedicated test structures, devices that contain a single crystal defect were selected and electrically tested in reverse bias mode. Photon emission microscopy was performed to enable the localization of the leakage current spots within the devices. Thus, a direct correlation of the various crystal defects with the reduced blocking capability mechanism was made. This evaluation helps to set directions and build a strategy towards the reduction of critical defects in order to improve the performance of SiC devices for high power applications. |
| first_indexed | 2024-03-12T15:39:07Z |
| format | Article |
| id | doaj.art-4b7144af66fe44f08b6a0039929d455c |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:39:07Z |
| publishDate | 2022-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-4b7144af66fe44f08b6a0039929d455c2023-08-09T16:04:32ZengIOP PublishingMaterials Research Express2053-15912022-01-0191212590110.1088/2053-1591/acaa1fImpact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devicesE Kodolitsch0https://orcid.org/0000-0002-3389-6566V Sodan1M Krieger2Heiko B Weber3N Tsavdaris4Lehrstuhl für Angewandte Physik, Department Physik, Friedrich-Alexander-Universität . Erlangen- Nürnberg, Staudtstraße 7, 91058 Erlangen, Germany; Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, AustriaInfineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, AustriaLehrstuhl für Angewandte Physik, Department Physik, Friedrich-Alexander-Universität . Erlangen- Nürnberg, Staudtstraße 7, 91058 Erlangen, GermanyLehrstuhl für Angewandte Physik, Department Physik, Friedrich-Alexander-Universität . Erlangen- Nürnberg, Staudtstraße 7, 91058 Erlangen, GermanyInfineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, AustriaIn this study, we report the impact of structural 4H-SiC epitaxial defects on the electrical characteristics and blocking capabilities of SiC power devices. The detection and classification of the various crystal defects existing in 4H-SiC epitaxial layers and substrates was carried out with a commercial inspection tool using an optical microscope with a photoluminescence channel (PL). After the fabrication of dedicated test structures, devices that contain a single crystal defect were selected and electrically tested in reverse bias mode. Photon emission microscopy was performed to enable the localization of the leakage current spots within the devices. Thus, a direct correlation of the various crystal defects with the reduced blocking capability mechanism was made. This evaluation helps to set directions and build a strategy towards the reduction of critical defects in order to improve the performance of SiC devices for high power applications.https://doi.org/10.1088/2053-1591/acaa1f4H-SiCSiC crystal defectsSiC power devicesleakage current fails |
| spellingShingle | E Kodolitsch V Sodan M Krieger Heiko B Weber N Tsavdaris Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices Materials Research Express 4H-SiC SiC crystal defects SiC power devices leakage current fails |
| title | Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices |
| title_full | Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices |
| title_fullStr | Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices |
| title_full_unstemmed | Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices |
| title_short | Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices |
| title_sort | impact of crystalline defects in 4h sic epitaxial layers on the electrical characteristics and blocking capability of sic power devices |
| topic | 4H-SiC SiC crystal defects SiC power devices leakage current fails |
| url | https://doi.org/10.1088/2053-1591/acaa1f |
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